S-13A1A16-A6T1U3

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SMD (Surface Mount Device)
Essence: Transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Maximum Power Dissipation: 500mW
• Collector-Base Voltage: 30V
• Collector Current: 100mA
• DC Current Gain: 100 to 600
• Transition Frequency: 250MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The S-13A1A16-A6T1U3 transistor has a total of three pins:

1. Base (B): Used for input signal connection.
2. Emitter (E): Connected to the ground or reference potential.
3. Collector (C): Output terminal for amplified signal.

Functional Features

• High gain amplification: The S-13A1A16-A6T1U3 provides high voltage gain, making it suitable for applications requiring signal amplification.
• Low noise: This transistor exhibits low noise characteristics, ensuring minimal interference in signal processing.
• Wide operating temperature range: With an operating temperature range of -55°C to +150°C, it can be used in various environments.
• Small form factor: The SMD package allows for easy integration onto circuit boards with limited space.

Advantages and Disadvantages

Advantages: - High gain amplification improves signal quality. - Low noise ensures accurate signal processing. - Wide operating temperature range enables versatile usage. - Small form factor facilitates compact circuit designs.

Disadvantages: - Limited maximum power dissipation may restrict usage in high-power applications. - Moderate transition frequency may limit its suitability for high-frequency applications.

Working Principles

The S-13A1A16-A6T1U3 is a bipolar junction transistor (BJT) that operates based on the principles of amplification and control of electric current. It consists of three layers of semiconductor material: the emitter, base, and collector. By applying a small input current to the base terminal, the transistor allows a larger current to flow between the collector and emitter terminals, amplifying the signal.

Detailed Application Field Plans

The S-13A1A16-A6T1U3 transistor finds application in various fields, including:

1. Audio Amplification: Used in audio systems to amplify weak signals from microphones or musical instruments.
2. Communication Systems: Employed in radio frequency (RF) circuits for signal amplification and modulation.
3. Sensor Interfaces: Utilized in sensor circuits to amplify weak signals from sensors before further processing.
4. Industrial Control Systems: Integrated into control circuits for amplifying control signals and driving actuators.

Detailed and Complete Alternative Models

1. S-13A1A16-A6T1U2
2. S-13A1A16-A6T1U4
3. S-13A1A16-A6T1U5
4. S-13A1A16-A6T1U6

These alternative models offer similar characteristics and pin configurations, providing flexibility in component selection based on specific requirements.

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