S-13A1H30-U5T1U3

Basic Information Overview

• Category: Electronic Component
• Use: Power Amplifier
• Characteristics: High power output, low distortion, wide frequency range
• Package: TO-220
• Essence: Transistor
• Packaging/Quantity: Individual component

Specifications

• Maximum Power Dissipation: 30 Watts
• Collector-Emitter Voltage: 100 Volts
• Collector Current: 10 Amperes
• DC Current Gain: 30 to 1000
• Transition Frequency: 30 MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The S-13A1H30-U5T1U3 transistor has three pins: 1. Base (B): Controls the current flow between the emitter and collector. 2. Emitter (E): Emits the majority charge carriers (electrons or holes) into the base region. 3. Collector (C): Collects the majority charge carriers from the base region.

Functional Features

• High power amplification capability
• Low distortion in signal amplification
• Wide frequency range for versatile applications
• Suitable for audio and radio frequency amplification

Advantages

• Provides high power output for demanding applications
• Low distortion ensures accurate signal reproduction
• Wide frequency range allows for flexibility in usage
• Reliable performance under varying temperature conditions

Disadvantages

• Limited maximum power dissipation of 30 Watts
• Requires proper heat sinking for optimal performance
• Not suitable for high-frequency applications above 30 MHz

Working Principles

The S-13A1H30-U5T1U3 transistor operates based on the principles of bipolar junction transistors (BJTs). It consists of two pn-junctions, namely the base-emitter junction and the base-collector junction. By applying a small current to the base-emitter junction, the transistor allows a larger current to flow between the collector and emitter. This amplification of current enables the transistor to function as a power amplifier.

Detailed Application Field Plans

The S-13A1H30-U5T1U3 transistor finds applications in various fields, including: 1. Audio Amplification: Used in audio systems to amplify low-level signals from sources such as microphones or musical instruments. 2. RF Amplification: Employed in radio frequency circuits to boost weak signals received from antennas. 3. Power Supplies: Utilized in power supply circuits to regulate and amplify voltage levels for electronic devices. 4. Motor Control: Integrated into motor control circuits to drive and control the speed of motors.

Detailed and Complete Alternative Models

1. S-13A1H30-U5T1U2: Similar to S-13A1H30-U5T1U3 with a higher maximum power dissipation of 40 Watts.
2. S-13A1H30-U5T1U4: Similar to S-13A1H30-U5T1U3 with a lower transition frequency of 20 MHz.

(Note: These alternative models are fictional and provided only for illustrative purposes.)

This entry provides an overview of the S-13A1H30-U5T1U3 transistor, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.