S-13R1B27-A4T2U3

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SMD (Surface Mount Device)
Essence: Transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Type: NPN Bipolar Junction Transistor
• Collector-Base Voltage (Vcbo): 30V
• Collector-Emitter Voltage (Vceo): 20V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 100mA
• Power Dissipation (Pd): 200mW
• Transition Frequency (ft): 250MHz
• Noise Figure (NF): 2dB
• Package Type: SOT-23

Detailed Pin Configuration

The S-13R1B27-A4T2U3 transistor has three pins:

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High gain amplification of weak signals
• Low noise performance for improved signal quality
• Suitable for small-signal amplification applications
• Compact SMD package for space-constrained designs
• Wide operating frequency range

Advantages and Disadvantages

Advantages: - High gain allows for effective signal amplification - Low noise figure ensures minimal distortion in amplified signals - Small package size enables integration into compact electronic devices - Wide operating frequency range accommodates various applications

Disadvantages: - Limited maximum collector current may restrict use in high-power applications - Relatively low power dissipation capability compared to other transistors

Working Principles

The S-13R1B27-A4T2U3 is an NPN bipolar junction transistor. It operates based on the principles of amplification and control of electrical current. When a small input signal is applied to the base terminal, the transistor amplifies it and produces a larger output signal at the collector terminal. The emitter terminal controls the flow of electrons between the base and collector, allowing for signal amplification.

Detailed Application Field Plans

The S-13R1B27-A4T2U3 transistor finds applications in various fields, including:

1. Audio Amplification: Used in audio amplifiers to boost weak audio signals.
2. Communication Systems: Employed in RF (Radio Frequency) circuits for signal amplification and transmission.
3. Sensor Interfaces: Utilized in sensor circuits to amplify weak sensor signals for further processing.
4. Oscillator Circuits: Integrated into oscillator circuits to generate stable oscillations for frequency generation.
5. Medical Devices: Incorporated into medical equipment for signal amplification in diagnostic and therapeutic applications.

Detailed and Complete Alternative Models

1. S-13R1B27-A4T2U1
2. S-13R1B27-A4T2U2
3. S-13R1B27-A4T2U4
4. S-13R1B27-A4T2U5

These alternative models are similar to the S-13R1B27-A4T2U3 transistor but may have slight variations in specifications or package type.

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