S-13R1G16-A4T2U3

Basic Information Overview

• Category: Electronic Component
• Use: Signal Amplification and Switching
• Characteristics: High Gain, Low Noise, Fast Switching Speed
• Package: SMD (Surface Mount Device)
• Essence: Transistor
• Packaging/Quantity: Tape and Reel, 3000 pieces per reel

Specifications

• Type: NPN Transistor
• Collector-Base Voltage (Vcbo): 30V
• Collector-Emitter Voltage (Vceo): 20V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 500mA
• Power Dissipation (Pd): 625mW
• Transition Frequency (ft): 250MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The S-13R1G16-A4T2U3 transistor has a total of three pins: 1. Base (B) 2. Collector (C) 3. Emitter (E)

Functional Features

• High voltage gain for signal amplification.
• Low noise performance for improved signal quality.
• Fast switching speed for efficient switching applications.
• Suitable for small-signal amplification and switching circuits.

Advantages

• High gain allows for effective amplification of weak signals.
• Low noise ensures minimal interference with the desired signal.
• Fast switching speed enables rapid switching between different states.
• Small package size makes it suitable for compact electronic devices.

Disadvantages

• Limited power handling capability compared to power transistors.
• Narrow operating temperature range may restrict certain applications.
• Requires careful handling during assembly due to its small size.

Working Principles

The S-13R1G16-A4T2U3 operates based on the principles of a bipolar junction transistor (BJT). It consists of three layers of semiconductor material: the emitter, base, and collector. By applying a small current to the base terminal, the transistor can control a larger current flowing between the collector and emitter terminals. This allows for signal amplification and switching functions.

Detailed Application Field Plans

The S-13R1G16-A4T2U3 transistor finds applications in various electronic circuits, including: 1. Audio Amplifiers: Provides signal amplification in audio systems. 2. Radio Frequency (RF) Circuits: Used for RF signal amplification and switching. 3. Oscillators: Enables oscillation in electronic oscillator circuits. 4. Switching Circuits: Facilitates efficient switching between different states.

Detailed and Complete Alternative Models

1. S-13R1G16-A4T2U2: Similar specifications with a different package type.
2. S-13R1G16-B4T2U3: Higher power handling capability with similar characteristics.
3. S-13R1G16-A4T2U4: Lower noise performance with comparable specifications.

(Note: The above alternative models are provided as examples and may not be an exhaustive list.)

This entry provides comprehensive information about the S-13R1G16-A4T2U3 transistor, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.