S-13R1G20-A4T2U3

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SMD (Surface Mount Device)
Essence: RF Amplifier
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Frequency Range: 1.5 GHz - 2.5 GHz
• Gain: 20 dB
• Noise Figure: 1.5 dB
• Input Power: 10 dBm
• Output Power: 18 dBm
• Supply Voltage: 3.3 V
• Current Consumption: 50 mA
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The S-13R1G20-A4T2U3 has a total of 6 pins:

1. Pin 1: RF Input
2. Pin 2: Ground
3. Pin 3: Bias Voltage
4. Pin 4: RF Output
5. Pin 5: No Connection
6. Pin 6: Ground

Functional Features

• High gain amplification of RF signals in the frequency range of 1.5 GHz to 2.5 GHz.
• Low noise figure ensures minimal signal degradation during amplification.
• Compact SMD package allows for easy integration into circuit boards.
• Designed for use in wireless communication systems, radar systems, and other RF applications.
• Stable performance over a wide temperature range (-40°C to +85°C).
• Low power consumption for energy-efficient operation.

Advantages and Disadvantages

Advantages: - High gain amplification improves signal strength and quality. - Low noise figure preserves signal integrity. - Compact size enables space-saving designs. - Wide operating temperature range allows for versatile applications. - Low power consumption reduces energy costs.

Disadvantages: - Limited frequency range (1.5 GHz to 2.5 GHz). - Requires external bias voltage for proper operation. - No connection on Pin 5 limits flexibility in circuit design.

Working Principles

The S-13R1G20-A4T2U3 is an RF amplifier that operates based on the principle of signal amplification through active devices such as transistors. It takes in a weak RF signal at the input pin and amplifies it to a higher power level at the output pin. The gain and noise figure specifications ensure that the amplified signal maintains its quality and strength throughout the amplification process.

Detailed Application Field Plans

The S-13R1G20-A4T2U3 is commonly used in the following application fields:

1. Wireless Communication Systems: Amplifies RF signals in wireless communication devices such as smartphones, tablets, and Wi-Fi routers.
2. Radar Systems: Enhances radar signal strength for improved detection and tracking capabilities.
3. Satellite Communication: Boosts RF signals in satellite communication systems for reliable data transmission.
4. Radio Frequency Identification (RFID): Amplifies RFID signals in identification and tracking systems.
5. Microwave Systems: Amplifies microwave signals in various microwave applications, including microwave ovens and point-to-point communication systems.

Detailed and Complete Alternative Models

1. S-13R1G18-A4T2U3: Similar to S-13R1G20-A4T2U3 but with a gain of 18 dB instead of 20 dB.
2. S-13R1G22-A4T2U3: Similar to S-13R1G20-A4T2U3 but with a gain of 22 dB instead of 20 dB.
3. S-13R1G20-A4T2U3B: Variant with built-in bias voltage generator for simplified circuit design.

(Note: The above alternative models are examples and not an exhaustive list.)

This entry provides a comprehensive overview of the S-13R1G20-A4T2U3 RF amplifier, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.