CY62147GE-45ZSXIT

Product Overview

Category

CY62147GE-45ZSXIT belongs to the category of synchronous SRAM (Static Random Access Memory) integrated circuits.

Use

This product is primarily used as a high-speed memory solution in various electronic devices and systems.

Characteristics

• High-speed operation: The CY62147GE-45ZSXIT offers fast access times, making it suitable for applications requiring quick data retrieval.
• Low power consumption: This SRAM chip is designed to minimize power consumption, making it ideal for battery-powered devices.
• Small form factor: The compact size of the CY62147GE-45ZSXIT allows for easy integration into space-constrained designs.
• Wide temperature range: It can operate reliably across a wide temperature range, making it suitable for both commercial and industrial applications.

Package and Quantity

The CY62147GE-45ZSXIT is available in a surface-mount 48-ball VFBGA (Very Fine Pitch Ball Grid Array) package. It is typically sold in reels containing multiple units.

Specifications

• Operating voltage: 2.5V - 3.6V
• Access time: 10 ns
• Density: 4 Megabits (512K x 8)
• Organization: 512K words x 8 bits
• Interface: Parallel
• Operating temperature range: -40°C to +85°C

Pin Configuration

The pin configuration of the CY62147GE-45ZSXIT is as follows:

1 A12 2 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 GND 11 I/O0 12 I/O1 13 I/O2 14 I/O3 15 I/O4 16 I/O5 17 I/O6 18 I/O7 19 VCC 20 CE# 21 OE# 22 WE# 23 UB# 24 LB# 25 A8 26 A9 27 A11 28 A10 29 A13 30 A14 31 A15 32 A16 33 A17 34 A18 35 A19 36 A20 37 A21 38 A22 39 A23 40 A24 41 A25 42 A26 43 A27 44 A28 45 A29 46 A30 47 A31 48 VCC

Functional Features

• As a synchronous SRAM, the CY62147GE-45ZSXIT offers high-speed read and write operations synchronized with an external clock signal.
• It supports burst mode operation, allowing for consecutive data transfers without the need for individual address inputs.
• The chip features automatic power-down and sleep modes to conserve energy when not in use.
• It incorporates built-in error detection and correction mechanisms to ensure data integrity.

Advantages and Disadvantages

Advantages

• High-speed operation enables quick data access.
• Low power consumption prolongs battery life in portable devices.
• Compact form factor facilitates integration into space-constrained designs.
• Wide temperature range allows for reliable operation in various environments.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit of storage compared to alternative memory solutions.

Working Principles

The CY62147GE-45ZSXIT operates based on the principles of static random access memory. It stores data in a matrix of flip-flops, which retain their state as long as power is supplied. The synchronous design ensures that read and write operations are synchronized with an external clock signal, enabling precise data transfers.

Application Field Plans

The CY62147GE-45ZSXIT finds applications in various electronic devices and systems, including: 1. Mobile phones and smartphones 2. Tablets and portable computing devices 3. Networking equipment 4. Industrial automation systems 5. Automotive electronics 6. Medical devices

Alternative Models

For those seeking alternative options, the following SRAM chips can be considered: 1. CY62148GE-45ZSXIT: Similar specifications but with higher density (8 Megabits). 2. CY62146EV30LL-45BVXI: Lower power consumption variant with extended temperature range. 3. IS61LV25616AL-10TLI: Comparable specifications from a different manufacturer.

These alternatives provide similar functionality and can be evaluated based on specific project requirements.

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