S29GL01GT11TFV033

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory for reliable data storage
• Packaging/Quantity: Tape and Reel packaging, 2500 units per reel

Specifications

• Memory Type: NOR Flash
• Density: 1 Gbit
• Organization: 128 M x 8 bits
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Page Size: 256 bytes
• Erase/Program Suspend/Resume: Yes
• Data Retention: 20 years

Detailed Pin Configuration

The S29GL01GT11TFV033 has a total of 56 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. WP#
46. BYTE#
47. RY/BY#
48. VSS
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS
55. VSS
56. VCC

Functional Features

• High-speed read and write operations
• Sector erase and chip erase functions
• Suspend and resume operations during erase and program cycles
• Hardware and software data protection mechanisms
• Low power consumption in standby mode
• Automatic sleep mode for power saving

Advantages and Disadvantages

Advantages: - High storage capacity - Fast read/write speeds - Reliable data retention - Low power consumption - Flexible erase and program options

Disadvantages: - Higher cost compared to other memory technologies - Limited endurance (number of erase/write cycles)

Working Principles

The S29GL01GT11TFV033 is based on NOR Flash memory technology. It uses a grid of memory cells, each capable of storing one bit of information. The memory cells are organized into sectors, which can be individually erased or programmed. When data is written, the memory cells are electrically charged or discharged to represent the desired information. Reading data involves detecting the electrical state of the memory cells.

Detailed Application Field Plans

The S29GL01GT11TFV033 is widely used in various electronic devices that require non-volatile data storage, such as:

1. Embedded systems
2. Automotive electronics
3. Industrial control systems
4. Consumer electronics
5. Networking equipment

Detailed and Complete Alternative Models

1. S29GL512T11TFI01 - 512 Mbit NOR Flash Memory
2. S29GL02GT11TFIV10 - 2 Gbit NOR Flash Memory
3. S29GL04GT11TFIV20 - 4 Gbit NOR Flash Memory
4. S29GL08GT11TFIV30 - 8 Gbit NOR Flash Memory
5. S29GL16GT11TFIV40 - 16 Gbit NOR Flash Memory

These alternative models offer different memory capacities to suit various application requirements.

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