S29GL256P11TAIV10

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High capacity
  • Fast read and write speeds
  • Low power consumption
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a compact and durable format
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Organization: 32 Megabit x 8 bits
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 90 ns (max)
• Erase/Program Suspend/Erase Suspend: Yes
• Burst Modes: Continuous Read, Fast Program, Page Program
• Sector Architecture: Uniform 64 KByte sectors with 4 KByte sub-sectors
• Endurance: 100,000 program/erase cycles (minimum)

Detailed Pin Configuration

The S29GL256P11TAIV10 has a total of 56 pins. The pin configuration is as follows:

1. VCCQ
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. BYTE#
43. WE#
44. CE#
45. RE#
46. WP#
47. RESET#
48. RY/BY#
49. VSSQ
50. VCC
51. VSS
52. NC
53. NC
54. NC
55. NC
56. NC

Functional Features

• High-speed data transfer: The S29GL256P11TAIV10 offers fast read and write speeds, allowing for efficient data storage and retrieval.
• Low power consumption: This flash memory device is designed to minimize power usage, making it suitable for battery-powered devices.
• Erase and program suspend: It supports erase and program suspend operations, enabling flexibility in managing data modifications.
• Uniform sector architecture: The memory is organized into uniform sectors with sub-sectors, facilitating efficient data management and updates.

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read and write speeds - Low power consumption - Flexible erase and program operations

Disadvantages: - Limited endurance (100,000 program/erase cycles) - Requires parallel interface, which may not be compatible with all systems

Working Principles

The S29GL256P11TAIV10 utilizes a floating gate transistor technology to store digital information. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. These charges can be removed during an erase operation, resetting the transistor to its original state. The stored charges represent the binary values of the data, which can be read by applying appropriate voltages to the memory cells.

Detailed Application Field Plans

The S29GL256P11TAIV10 is widely used in various electronic devices that require non-volatile storage, such as: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Gaming consoles - Industrial control systems

Detailed and Complete Alternative Models

1. S29GL128P11TFI010: 128 Megabit Flash Memory with similar specifications but half the capacity.
2. S29GL512P11FFI020: 512 Megabit Flash Memory with higher capacity and similar characteristics.
3. S29GL064P11TFI040: 64 Megabit Flash Memory with lower capacity and similar features.

These alternative models offer different capacities while maintaining similar functionality and characteristics to the S29GL256P11TAIV10.

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