DMN60H080DS-7

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high-current applications
Characteristics: High voltage capability, low on-resistance, fast switching speed
Package: TO-252 (DPAK)
Essence: Efficient power switching
Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 800V
• Continuous Drain Current: 6A
• On-Resistance: 1.2Ω
• Gate Threshold Voltage: 2.5V
• Total Gate Charge: 15nC
• Pulse Width Modulation Capable: Yes

Detailed Pin Configuration

The DMN60H080DS-7 has three pins: 1. Gate (G): Input for controlling the switching of the MOSFET 2. Drain (D): Connection to the power supply or load 3. Source (S): Common connection for the control circuit and load

Functional Features

• Fast switching speed for efficient power conversion
• Low on-resistance minimizes power loss
• High voltage capability enables use in a wide range of applications
• Pulse width modulation capable for precise control

Advantages and Disadvantages

Advantages: - High voltage capability allows for versatile applications - Low on-resistance leads to reduced power dissipation - Fast switching speed enhances efficiency

Disadvantages: - Higher gate threshold voltage compared to some alternative models - Limited continuous drain current compared to higher-rated MOSFETs

Working Principles

The DMN60H080DS-7 operates based on the principle of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. This enables efficient switching of high currents in various electronic circuits.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications including: - Power supplies - Motor control systems - Inverters - DC-DC converters - Uninterruptible power supplies (UPS) - Solar inverters

Detailed and Complete Alternative Models

Some alternative models to the DMN60H080DS-7 include: - IRF840: Similar voltage rating and on-resistance - FDPF7N50NZ: Higher continuous drain current and lower on-resistance - STW20NK50Z: Lower on-resistance and higher continuous drain current

In conclusion, the DMN60H080DS-7 Power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a variety of power switching applications. While it has certain limitations, its functional features and application versatility make it a valuable component in electronic circuits.

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