DS1225AB-200IND

Product Overview

Category

The DS1225AB-200IND belongs to the category of non-volatile memory devices.

Use

This product is commonly used for storing and retrieving data in electronic systems, such as microcontrollers, computers, and other digital devices.

Characteristics

• Non-volatile: The DS1225AB-200IND retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 64 kilobits (8 kilobytes).
• Fast access time: The device provides quick access to stored data.
• Low power consumption: It operates with low power requirements.
• Durable: The DS1225AB-200IND has a long lifespan and can withstand harsh environmental conditions.

Package

The DS1225AB-200IND is available in a standard integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic systems.

Packaging/Quantity

The DS1225AB-200IND is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary.

Specifications

• Part Number: DS1225AB-200IND
• Memory Type: Non-volatile SRAM
• Capacity: 64 kilobits (8 kilobytes)
• Access Time: 200 nanoseconds
• Operating Voltage: 4.5V to 5.5V
• Standby Current: 100 microamps (max)
• Data Retention: More than 10 years
• Package Type: Integrated Circuit (IC)

Detailed Pin Configuration

The DS1225AB-200IND has a standard pin configuration consisting of the following pins:

1. Chip Enable (/CE)
2. Output Enable (/OE)
3. Write Enable (/WE)
4. Address Inputs (A0-A14)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (+5V)
7. Ground (GND)

Functional Features

• Non-volatile storage: The DS1225AB-200IND retains data even when power is disconnected.
• Random access: It allows for direct read and write operations to specific memory locations.
• Easy integration: The device can be easily interfaced with various microcontrollers and digital systems.
• High-speed operation: The DS1225AB-200IND offers fast access times, enabling efficient data retrieval.

Advantages and Disadvantages

Advantages

• Reliable non-volatile storage
• High capacity for data storage
• Fast access time
• Low power consumption
• Durable design

Disadvantages

• Limited storage capacity compared to other memory devices
• Relatively higher cost per kilobyte of storage

Working Principles

The DS1225AB-200IND utilizes a combination of volatile and non-volatile memory technologies. It employs static random-access memory (SRAM) cells for temporary data storage and a built-in lithium battery to provide the necessary power for retaining data when the main power source is disconnected. This combination ensures that the stored data remains intact even during power outages or system shutdowns.

Detailed Application Field Plans

The DS1225AB-200IND finds applications in various electronic systems, including but not limited to: - Embedded systems - Industrial automation - Automotive electronics - Medical devices - Communication equipment

Detailed and Complete Alternative Models

1. DS1230AB-200IND: Similar to DS1225AB-200IND but with a higher capacity of 256 kilobits (32 kilobytes).
2. DS1210AB-200IND: A lower capacity alternative with 16 kilobits (2 kilobytes) of storage.
3. DS1245AB-200IND: Offers a higher capacity of 1 megabit (128 kilobytes) for applications requiring more storage.

These alternative models provide options with varying capacities to suit different project requirements.

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