DS1225AB-200IND+ - English Editing Encyclopedia Entry

Product Overview

Category

The DS1225AB-200IND+ belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems, such as microcontrollers, computers, and embedded systems.

Characteristics

• Non-volatile: The DS1225AB-200IND+ retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 64 kilobits (8 kilobytes).
• Fast access time: The device provides quick access to stored data.
• Low power consumption: It operates efficiently with low power requirements.

Package

The DS1225AB-200IND+ is available in a standard integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The DS1225AB-200IND+ is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary.

Specifications

• Part Number: DS1225AB-200IND+
• Memory Type: Non-volatile SRAM
• Capacity: 64 kilobits (8 kilobytes)
• Access Time: 200 nanoseconds
• Supply Voltage: 4.5V to 5.5V
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The DS1225AB-200IND+ has a total of 28 pins. The pin configuration is as follows:

1. Chip Enable (/CE)
2. Output Enable (/OE)
3. Write Enable (/WE)
4. Address Inputs (A0-A14)
5. Data Inputs/Outputs (DQ0-DQ7)
6. VCC (Power Supply)
7. Ground (GND)

Functional Features

• Non-volatile storage: The DS1225AB-200IND+ retains data even when power is disconnected.
• Random access: It allows for direct read and write operations to specific memory locations.
• High-speed operation: The device offers fast access times, enabling efficient data retrieval.
• Low power consumption: It operates with low power requirements, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention.
• High capacity for storing large amounts of data.
• Fast access time enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit compared to some alternatives.
• Susceptible to electromagnetic interference.

Working Principles

The DS1225AB-200IND+ utilizes non-volatile static random-access memory (SRAM) technology. It combines the benefits of SRAM's high-speed operation with non-volatile storage capabilities. The device uses a combination of volatile and non-volatile elements to achieve this functionality.

Detailed Application Field Plans

The DS1225AB-200IND+ finds applications in various electronic systems, including but not limited to: - Microcontrollers - Computers - Embedded systems - Industrial automation - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

1. DS1230AB-200IND+: Similar to DS1225AB-200IND+, but with a larger capacity of 256 kilobits (32 kilobytes).
2. DS1216E-200IND+: A lower-capacity alternative with 16 kilobits (2 kilobytes) of storage.
3. DS1245Y-70IND+: Offers a higher operating temperature range of -40°C to +125°C.

These alternative models provide options with varying capacities and specifications to suit different application requirements.

Word count: 450 words