DS1230AB-120

Product Overview

Category

The DS1230AB-120 belongs to the category of non-volatile static random-access memory (NVSRAM).

Use

It is primarily used for storing critical data in applications where data retention is essential, such as in industrial control systems, medical devices, and communication equipment.

Characteristics

• Non-volatile: The DS1230AB-120 retains data even when power is removed.
• Static RAM: It provides fast read and write access times.
• High density: The DS1230AB-120 offers a large storage capacity.
• Low power consumption: It operates on low power, making it suitable for battery-powered devices.

Package

The DS1230AB-120 comes in a standard 32-pin DIP (Dual Inline Package) or SOIC (Small Outline Integrated Circuit) package.

Essence

The essence of the DS1230AB-120 lies in its ability to combine the benefits of both volatile and non-volatile memories. It provides the speed and ease of use of SRAM while retaining data without the need for continuous power supply.

Packaging/Quantity

The DS1230AB-120 is typically packaged individually and is available in various quantities depending on the manufacturer's specifications.

Specifications

• Memory Size: 256 kilobits (32 kilobytes)
• Organization: 32K x 8 bits
• Supply Voltage: 4.5V to 5.5V
• Access Time: 120 nanoseconds
• Data Retention: Up to 10 years
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The DS1230AB-120 has a total of 32 pins, which are assigned specific functions. The pin configuration is as follows:

1. Chip Enable (/CE)
2. Output Enable (/OE)
3. Write Enable (/WE)
4. Address Inputs (A0-A14)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. Vcc (+5V)

Functional Features

• Battery Backup: The DS1230AB-120 includes an integrated lithium energy source, ensuring data retention during power loss.
• Automatic Store on Power Loss: It automatically transfers data from the SRAM to non-volatile memory when power is lost.
• High-Speed Performance: The DS1230AB-120 offers fast access times, allowing for efficient data retrieval and storage.

Advantages and Disadvantages

Advantages

• Non-volatile data storage
• Fast read and write access times
• High data retention period
• Low power consumption

Disadvantages

• Limited storage capacity compared to other memory types
• Higher cost compared to traditional SRAM

Working Principles

The DS1230AB-120 combines a static RAM array with a non-volatile EEPROM (Electrically Erasable Programmable Read-Only Memory) element. When power is applied, the device operates as a standard SRAM, providing fast read and write access. In the event of a power loss, the integrated lithium energy source ensures that the data is transferred from the SRAM to the non-volatile EEPROM, preserving it for future use.

Detailed Application Field Plans

The DS1230AB-120 finds applications in various fields, including:

1. Industrial Control Systems: Used for storing critical parameters and configuration data in programmable logic controllers (PLCs) and automation systems.
2. Medical Devices: Utilized for storing patient data, calibration settings, and firmware in medical equipment such as patient monitors and infusion pumps.
3. Communication Equipment: Employed in networking devices, routers, and switches to store configuration settings and firmware updates.

Detailed and Complete Alternative Models

1. DS1230AB-70: Similar to the DS1230AB-120 but with a faster access time of 70 nanoseconds.
2. DS1230Y-100: A lower-density alternative with 128 kilobits (16 kilobytes) of memory.
3. DS1245AB-120: Offers the same capacity as the DS1230AB-120 but includes additional features such as an integrated real-time clock.

In conclusion, the DS1230AB-120 is a non-volatile static RAM that combines the benefits of SRAM and EEPROM technologies. With its high data retention, fast access times, and low power consumption, it is well-suited for critical data storage in various applications.