DS1230W-100IND

Product Overview

Category

The DS1230W-100IND belongs to the category of non-volatile static RAM (NVSRAM).

Use

This product is primarily used for storing data in applications where non-volatility is required. It combines the benefits of both SRAM and EEPROM, providing fast read/write access like SRAM while retaining data even when power is lost, similar to EEPROM.

Characteristics

• Non-volatile: Retains data even without power
• Fast access time: Provides quick read/write operations
• High endurance: Supports a large number of read/write cycles
• Low power consumption: Operates efficiently with minimal power requirements

Package

The DS1230W-100IND is available in a standard 28-pin DIP (Dual Inline Package) format.

Essence

The essence of the DS1230W-100IND lies in its ability to combine the advantages of SRAM and EEPROM technologies, offering non-volatile storage with fast access times.

Packaging/Quantity

This product is typically packaged individually and is available in various quantities depending on the manufacturer's specifications.

Specifications

• Memory capacity: 1 Megabit (128K x 8 bits)
• Operating voltage: 4.5V to 5.5V
• Access time: 70 ns
• Data retention: Minimum 10 years
• Endurance: Minimum 10^6 read/write cycles
• Operating temperature range: -40°C to +85°C

Detailed Pin Configuration

The DS1230W-100IND has a total of 28 pins, each serving a specific function. The pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A16)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. Vcc (+5V)

Functional Features

• Non-volatile storage: Retains data even during power loss
• Fast read/write access: Provides quick data retrieval and modification
• Easy integration: Compatible with standard memory interfaces
• High endurance: Supports a large number of read/write cycles
• Low power consumption: Operates efficiently with minimal power requirements

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data integrity during power interruptions
• Fast access time allows for efficient data retrieval and modification
• High endurance enables reliable long-term usage
• Low power consumption reduces energy requirements

Disadvantages

• Relatively higher cost compared to traditional SRAM
• Limited memory capacity compared to other non-volatile memory options

Working Principles

The DS1230W-100IND utilizes a combination of SRAM and EEPROM technologies. It employs a volatile SRAM array for fast read/write operations, while an integrated EEPROM component ensures non-volatility by storing the data in a separate electrically erasable section. This hybrid design allows for both high-speed operation and data retention during power loss.

Detailed Application Field Plans

The DS1230W-100IND finds applications in various fields where non-volatile storage with fast access times is required. Some potential application areas include:

1. Embedded systems: Used for storing critical system parameters and configuration data.
2. Industrial automation: Enables data logging and storage in control systems.
3. Automotive electronics: Stores essential information such as calibration data and fault codes.
4. Medical devices: Facilitates non-volatile storage of patient data and device settings.
5. Communication systems: Utilized for buffering and caching data in network equipment.

Detailed and Complete Alternative Models

1. DS1230AB-100+: Similar to DS1230W-100IND, but available in a surface mount package.
2. M48Z02-150PC1: Offers higher memory capacity (2 Megabits) with similar characteristics.
3. FM1608-120-PG: Provides lower power consumption and extended temperature range.

These alternative models offer similar functionality and characteristics to the DS1230W-100IND, providing options for different application requirements.

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