DS1250W-100IND+ - English Editing Encyclopedia Entry

Product Overview

Category: Integrated Circuits (ICs)

Use: The DS1250W-100IND+ is a high-performance non-volatile static random access memory (NVSRAM) integrated circuit. It combines the benefits of both SRAM and EEPROM technologies, providing fast read/write operations along with non-volatile data storage.

Characteristics: - High-speed access time - Non-volatile data retention - Low power consumption - Wide operating voltage range - Industrial temperature range (-40°C to +85°C) - RoHS compliant

Package: The DS1250W-100IND+ is available in a 32-pin DIP (Dual In-line Package) format, which ensures easy integration into various electronic systems.

Essence: This IC offers reliable and secure data storage capabilities, making it suitable for applications where data integrity is critical, such as industrial control systems, medical equipment, and automotive electronics.

Packaging/Quantity: The DS1250W-100IND+ is typically packaged in tubes or trays, with a quantity of 25 units per tube/tray.

Specifications

• Memory Size: 1 Megabit (128K x 8 bits)
• Access Time: 100 ns
• Supply Voltage: 4.5V to 5.5V
• Standby Current: 10µA (typical)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years minimum

Detailed Pin Configuration

The DS1250W-100IND+ features a total of 32 pins, each serving a specific purpose. Here is the detailed pin configuration:

1. Chip Enable (/CE)
2. Output Enable (/OE)
3. Write Enable (/WE)
4. Address Inputs (A0-A16)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (+5V)
7. Ground (GND)

Functional Features

• Non-volatile data storage: The DS1250W-100IND+ retains data even when power is removed, ensuring data integrity and reliability.
• High-speed access: With an access time of 100 ns, this IC allows for fast read/write operations, enhancing overall system performance.
• Low power consumption: The device operates with low power requirements, making it suitable for battery-powered applications.
• Wide operating voltage range: The DS1250W-100IND+ can operate within a voltage range of 4.5V to 5.5V, providing flexibility in various electronic systems.

Advantages and Disadvantages

Advantages: - Fast access time - Non-volatile data retention - Low power consumption - Wide operating voltage range - Suitable for industrial temperature range

Disadvantages: - Limited memory size (1 Megabit)

Working Principles

The DS1250W-100IND+ utilizes a combination of SRAM and EEPROM technologies. It employs a floating-gate cell design that allows for non-volatile data storage. When data is written, the charge is trapped in the floating gate, ensuring data retention even when power is removed. During read operations, the stored charge is sensed, allowing for fast and reliable data retrieval.

Detailed Application Field Plans

The DS1250W-100IND+ finds application in various fields, including: 1. Industrial control systems 2. Medical equipment 3. Automotive electronics 4. Communication devices 5. Aerospace systems

Detailed and Complete Alternative Models

1. DS1245W-100IND+: Similar to DS1250W-100IND+, but with a smaller memory size (512K x 8 bits).
2. DS1260W-100IND+: Higher capacity version of DS1250W-100IND+ with 2 Megabits (256K x 8 bits) memory size.
3. DS1230Y-100IND+: Non-volatile SRAM with a battery backup feature, offering 256K x 8 bits memory size.

These alternative models provide options based on different memory capacities and additional features to suit specific application requirements.

In conclusion, the DS1250W-100IND+ is a high-performance NVSRAM IC that combines the benefits of SRAM and EEPROM technologies. With its non-volatile data storage capabilities, fast access time, and low power consumption, it is well-suited for various applications in industrial, medical, automotive, and communication fields.