MT29F4G08ABBDAHC-IT:D TR

Product Overview

Category

The MT29F4G08ABBDAHC-IT:D TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08ABBDAHC-IT:D TR offers a storage capacity of 4 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product is designed to provide reliable and consistent performance over an extended period.
• Low power consumption: The MT29F4G08ABBDAHC-IT:D TR is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a small form factor, making it suitable for integration into compact electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental safety.

Package and Quantity

The MT29F4G08ABBDAHC-IT:D TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Memory Type: NAND Flash
• Capacity: 4 GB
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. R/B#
8. WP#
9. NC
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Program Operation: The MT29F4G08ABBDAHC-IT:D TR allows data to be programmed in page units, enhancing efficiency.
• Block Erase Operation: It supports block erase operations, enabling quick and convenient erasure of data.
• Random Access: This NAND flash memory allows for random access to specific memory locations, facilitating efficient data retrieval.
• Error Correction Code (ECC): The product incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: It employs wear-leveling techniques to distribute write operations evenly across the memory cells, extending the product's lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity meets the demands of modern electronic devices.
• Fast data transfer rate enhances overall system performance.
• Reliable performance ensures data integrity and longevity.
• Low power consumption prolongs battery life in portable devices.
• Compact package enables integration into space-constrained designs.
• RoHS compliance promotes environmental sustainability.

Disadvantages

• Limited compatibility with certain legacy systems that require different memory interfaces.
• Higher cost compared to lower-capacity NAND flash memory options.

Working Principles

The MT29F4G08ABBDAHC-IT:D TR operates based on the principles of NAND flash memory technology. It utilizes a grid-like structure of memory cells, where data is stored as electrical charges within the floating gate transistors. The presence or absence of charges determines the binary state of each memory cell, representing either a "0" or a "1". Data can be written to and read from these memory cells using specific voltage levels and control signals.

Detailed Application Field Plans

The MT29F4G08ABBDAHC-IT:D TR finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F4G08ABADAWP-IT: This alternative model offers similar specifications and features but comes in a different package type (TSOP-I).
2. MT29F