MT29F4G16ABADAWP:D TR

Product Overview

Category

MT29F4G16ABADAWP:D TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G16ABADAWP:D TR offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with low power consumption.
• Durable design: It is designed to withstand harsh environmental conditions and has a long lifespan.
• Compact package: The MT29F4G16ABADAWP:D TR comes in a compact package, making it suitable for small-sized electronic devices.

Package and Quantity

The MT29F4G16ABADAWP:D TR is available in a surface-mount TSOP (Thin Small Outline Package) with 48 pins. It is typically sold in reels containing a specific quantity, usually around 2500 units per reel.

Specifications

• Memory Type: NAND Flash
• Capacity: 4 Gb
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 52 MB/s (Read), Up to 20 MB/s (Write)

Pin Configuration

The detailed pin configuration of MT29F4G16ABADAWP:D TR is as follows:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. R/B#
8. WP#
9. NC
10. A0
11. A1
12. A2
13. A3
14. A4
15. A5
16. A6
17. A7
18. A8
19. A9
20. A10
21. A11
22. A12
23. A13
24. A14
25. A15
26. DQ0
27. DQ1
28. DQ2
29. DQ3
30. DQ4
31. DQ5
32. DQ6
33. DQ7
34. VSS
35. VSS
36. VSS
37. VSS
38. VSS
39. VSS
40. VSS
41. VSS
42. VSS
43. VSS
44. VSS
45. VSS
46. VSS
47. VSS
48. VSS

Functional Features

• Page Read/Program/Erase: The MT29F4G16ABADAWP:D TR allows for efficient page read, program, and erase operations.
• Block Management: It supports various block management techniques to optimize data storage and improve performance.
• Error Correction Code (ECC): This NAND flash memory incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: It implements wear leveling algorithms to distribute write operations evenly across the memory cells, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Durable design
• Compact package

Disadvantages

• Limited endurance: NAND flash memory has a limited number of program/erase cycles before it may start to degrade.
• Higher cost per bit compared to other types of memory.

Working Principles

The MT29F4G16ABADAWP:D TR utilizes NAND flash technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on the floating gate. The data is accessed by applying appropriate voltages to the control pins and reading or writing the stored charge.

Detailed Application Field Plans

The MT29F4G16ABADAWP:D TR is widely used in various electronic devices that require non-volatile storage for data, such as: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

Here are some alternative models that offer similar functionality and specifications to the MT29F4G16ABADAWP:D TR:

1. MT29F4G08ABAEAWP:D TR - 4 Gb NAND Flash Memory, TSOP package.
2. MT29F4G16ABAFDWP:D TR -