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1N5812R Diode
Product Overview
The 1N5812R diode belongs to the category of Schottky diodes, which are widely used in electronic circuits for their low forward voltage drop and fast switching capabilities. These diodes are commonly utilized in power supply applications, reverse polarity protection, and signal demodulation due to their unique characteristics. The 1N5812R diode is typically available in a variety of packages, including DO-41, SMA, and SMB, and is often sold in tape and reel packaging for automated assembly.
Basic Information
- Category: Schottky diode
- Use: Power supply, reverse polarity protection, signal demodulation
- Characteristics: Low forward voltage drop, fast switching
- Package: DO-41, SMA, SMB
- Packaging/Quantity: Tape and reel packaging for automated assembly
Specifications
- Forward Voltage Drop: 0.45V at 1A
- Reverse Voltage: 20V
- Maximum Continuous Current: 1A
- Operating Temperature Range: -65°C to 125°C
Detailed Pin Configuration
The 1N5812R diode typically has two pins, with the cathode identified by a line on the body of the diode. The pin configuration is as follows: - Pin 1: Anode - Pin 2: Cathode (identified by a line)
Functional Features
The 1N5812R diode offers fast switching speed, low forward voltage drop, and high current capability, making it suitable for various power supply and signal demodulation applications. Its Schottky barrier design allows for efficient energy conversion and reduced power loss.
Advantages and Disadvantages
Advantages
- Low forward voltage drop
- Fast switching speed
- High current capability
- Efficient energy conversion
Disadvantages
- Limited reverse voltage rating compared to other diode types
- Sensitive to temperature variations
Working Principles
The 1N5812R diode operates based on the Schottky barrier principle, where the metal-semiconductor junction enables fast switching and low forward voltage drop. When a forward bias is applied, the diode conducts current with minimal voltage loss, making it ideal for power efficiency in electronic circuits.
Detailed Application Field Plans
The 1N5812R diode finds extensive use in the following application fields: - Power supply units - Reverse polarity protection circuits - Signal demodulation in communication systems - Voltage clamping and freewheeling diode in switching power supplies
Detailed and Complete Alternative Models
- 1N5817
- 1N5818
- 1N5819
- SS12
- SS13
- SS14
In summary, the 1N5812R diode is a versatile component with its unique characteristics and wide range of applications, making it an essential part of modern electronic circuits.
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What is the maximum forward voltage drop of 1N5812R?
- The maximum forward voltage drop of 1N5812R is typically 0.45V at a forward current of 1A.
What is the reverse voltage rating of 1N5812R?
- The reverse voltage rating of 1N5812R is 20V.
What is the maximum forward current that 1N5812R can handle?
- 1N5812R can handle a maximum forward current of 1A.
What is the typical junction capacitance of 1N5812R?
- The typical junction capacitance of 1N5812R is 25pF at a reverse bias of 4V.
What are the typical applications of 1N5812R?
- 1N5812R is commonly used in low voltage, high frequency inverters, freewheeling, and polarity protection applications.
What is the operating temperature range of 1N5812R?
- The operating temperature range of 1N5812R is -65°C to +125°C.
Does 1N5812R have a fast recovery time?
- Yes, 1N5812R has a fast recovery time of 500ns (typical) for a 1A forward current.
Is 1N5812R suitable for surface mount applications?
- Yes, 1N5812R is available in a surface mount package and is suitable for surface mount applications.
What is the package type of 1N5812R?
- 1N5812R is available in a DO-41 package.
Can 1N5812R be used in automotive applications?
- Yes, 1N5812R is suitable for use in automotive applications due to its rugged construction and reliability.