Microsemi Corporation
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1N5814R
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1N5814R Diode

Product Overview

The 1N5814R diode is a Schottky barrier rectifier designed for high efficiency and low power loss in various applications. This diode belongs to the category of semiconductor devices and is commonly used in power supply circuits, voltage clamping, and reverse polarity protection. The 1N5814R diode is known for its fast switching speed, low forward voltage drop, and high current capability. It is typically available in a DO-41 package and is widely used in electronic circuits where efficient rectification is required.

Basic Information

  • Category: Semiconductor Devices
  • Use: Rectification, Voltage Clamping, Reverse Polarity Protection
  • Characteristics: Fast Switching Speed, Low Forward Voltage Drop, High Current Capability
  • Package: DO-41
  • Essence: High Efficiency Schottky Barrier Rectifier
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Maximum Average Forward Current: 1A
  • Maximum Peak Forward Surge Current: 25A
  • Maximum Reverse Voltage: 40V
  • Forward Voltage Drop: Typically 0.45V at 1A
  • Operating Temperature Range: -65°C to +125°C

Detailed Pin Configuration

The 1N5814R diode has two pins, anode (A) and cathode (K), with the anode being connected to the positive side of the circuit and the cathode to the negative side.

Functional Features

  • Fast Switching Speed: Enables quick response in rectification applications.
  • Low Forward Voltage Drop: Reduces power loss and improves efficiency.
  • High Current Capability: Suitable for applications requiring high current handling.

Advantages and Disadvantages

Advantages

  • Efficient rectification with low power loss
  • Fast switching speed
  • High current capability

Disadvantages

  • Limited maximum reverse voltage compared to some other diode types
  • Sensitive to temperature variations

Working Principles

The 1N5814R diode operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for fast switching and low forward voltage drop. When a forward bias is applied, the diode conducts current efficiently, and when reverse biased, it blocks the flow of current effectively.

Detailed Application Field Plans

The 1N5814R diode finds extensive use in various applications, including: - Power supply circuits - Voltage clamping circuits - Reverse polarity protection in electronic systems - Battery charging and discharging circuits - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the 1N5814R diode include: - 1N5817 - 1N5819 - SS14 - SS34 - BAT54S

In summary, the 1N5814R diode is a versatile semiconductor device known for its high efficiency, fast switching speed, and suitability for various rectification and voltage clamping applications. Its characteristics make it a popular choice in electronic circuits where low power loss and high current capability are essential.

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  1. What is the 1N5814R diode used for?

    • The 1N5814R diode is commonly used in applications requiring high current rectification, such as power supplies and voltage regulation circuits.

  2. What are the key features of the 1N5814R diode?

    • The 1N5814R diode features a low forward voltage drop, high surge current capability, and fast switching speed, making it suitable for high-frequency applications.

  3. What is the maximum forward voltage of the 1N5814R diode?

    • The maximum forward voltage of the 1N5814R diode is typically around 0.55V at a forward current of 1A.

  4. Can the 1N5814R diode handle high currents?

    • Yes, the 1N5814R diode is designed to handle high currents, with a maximum average forward current rating of 1A.

  5. Is the 1N5814R diode suitable for reverse polarity protection?

    • Yes, the 1N5814R diode can be used for reverse polarity protection due to its low reverse leakage current and fast recovery time.

  6. What are some typical applications of the 1N5814R diode?

    • Typical applications include DC-DC converters, freewheeling diodes, OR-ing diodes, and battery charging circuits.

  7. What is the reverse recovery time of the 1N5814R diode?

    • The reverse recovery time of the 1N5814R diode is typically around 50ns, making it suitable for high-speed switching applications.

  8. Does the 1N5814R diode require a heat sink?

    • In most applications, the 1N5814R diode does not require a heat sink due to its low forward voltage drop and efficient thermal characteristics.

  9. Can the 1N5814R diode withstand high surge currents?

    • Yes, the 1N5814R diode has a high surge current capability, making it suitable for applications with transient overcurrent conditions.

  10. Are there any important considerations when using the 1N5814R diode in a circuit?

    • It's important to consider the maximum forward current, reverse voltage, and thermal management to ensure proper operation and reliability in the circuit.