JAN1N1615

Product Overview

Category: Diode
Use: Rectification and voltage regulation
Characteristics: High reliability, low forward voltage drop, fast switching speed
Package: DO-35
Essence: Silicon rectifier diode
Packaging/Quantity: Bulk packaging, 1000 units per pack

Specifications

Forward Voltage Drop: 0.7V
Reverse Voltage: 75V
Forward Current: 1A
Reverse Recovery Time: 4ns
Operating Temperature Range: -65°C to 175°C

Detailed Pin Configuration

The JAN1N1615 diode has two pins: 1. Anode (A) 2. Cathode (K)

Functional Features

High reliability and rugged construction
Fast recovery time for high-speed switching applications
Low forward voltage drop for efficient energy conversion

Advantages and Disadvantages

Advantages

Reliable performance in harsh environments
Fast switching speed
Low power dissipation

Disadvantages

Limited reverse voltage capability compared to some other diodes
Sensitive to temperature extremes

Working Principles

The JAN1N1615 diode operates on the principle of unidirectional current flow, allowing current to pass through it in only one direction. When a positive voltage is applied to the anode with respect to the cathode, the diode conducts and allows current to flow. In the reverse bias condition, the diode blocks the current flow.

Detailed Application Field Plans

The JAN1N1615 diode is commonly used in: - Power supply circuits - Voltage regulation circuits - Switching power supplies - Rectification circuits

Detailed and Complete Alternative Models

Some alternative models to JAN1N1615 include: - 1N4148: General-purpose diode with similar characteristics - 1N5819: Schottky diode with lower forward voltage drop - 1N4001: Standard rectifier diode with higher reverse voltage capability

This comprehensive entry provides detailed information about the JAN1N1615 diode, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

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What is JAN1N1615?
- JAN1N1615 is a high-reliability, military-grade silicon rectifier diode.
What are the key specifications of JAN1N1615?
- The key specifications include a maximum repetitive peak reverse voltage of 175 volts, a forward current of 0.5 amps, and a forward voltage drop of 1 volt at 0.1 amp.
In what applications can JAN1N1615 be used?
- JAN1N1615 is commonly used in military and aerospace applications, as well as in other high-reliability electronic systems where ruggedness and reliability are critical.
What are the temperature ratings for JAN1N1615?
- The diode is rated for operation over a temperature range of -65°C to +175°C.
Is JAN1N1615 suitable for high-frequency applications?
- While JAN1N1615 is not specifically designed for high-frequency applications, it can be used in low to moderate frequency circuits.
What are the packaging options available for JAN1N1615?
- JAN1N1615 is available in various package types, including DO-35 and axial-lead packages.
Does JAN1N1615 have any special handling requirements?
- JAN1N1615 should be handled with standard ESD precautions to prevent damage from electrostatic discharge.
Can JAN1N1615 be used in parallel or series configurations?
- Yes, JAN1N1615 can be used in parallel or series configurations to achieve higher voltage or current ratings.
Are there any known failure modes for JAN1N1615?
- Common failure modes for JAN1N1615 include thermal overstress and reverse voltage breakdown.
Where can I find detailed application notes for using JAN1N1615 in technical solutions?
- Detailed application notes for JAN1N1615 can be found in the manufacturer's datasheet and application guides, as well as in relevant industry publications and technical forums.