JAN1N3768

Product Overview

Category: Diode
Use: Rectification and voltage regulation
Characteristics: High current capability, low forward voltage drop
Package: DO-41
Essence: Silicon rectifier diode
Packaging/Quantity: Bulk packaging, quantity varies

Specifications

Voltage Rating: 100V
Current Rating: 10A
Forward Voltage Drop: 1V at 10A
Reverse Leakage Current: 5µA at 80V

Detailed Pin Configuration

The JAN1N3768 diode has two pins, anode (A) and cathode (K). The anode is connected to the positive terminal of the circuit, while the cathode is connected to the negative terminal.

Functional Features

High current capability allows for efficient power handling
Low forward voltage drop minimizes power loss
Fast switching characteristics enable rapid response in circuits

Advantages and Disadvantages

Advantages

High current rating
Low forward voltage drop
Fast switching speed

Disadvantages

Higher reverse leakage current compared to some alternative models
Limited voltage rating compared to higher voltage diodes

Working Principles

The JAN1N3768 operates based on the principle of semiconductor junction behavior. When a forward bias is applied, it allows current to flow with minimal resistance. In reverse bias, it blocks the flow of current, exhibiting high resistance.

Detailed Application Field Plans

The JAN1N3768 diode finds applications in various fields such as: - Power supplies - Voltage regulators - Rectifiers in electronic circuits - Motor drive circuits

Detailed and Complete Alternative Models

Some alternative models to JAN1N3768 include: - 1N4001: Lower current rating but higher voltage capability - 1N5408: Higher current and voltage ratings - 1N5819: Schottky diode with lower forward voltage drop

In conclusion, the JAN1N3768 diode is a versatile component with high current capability and low forward voltage drop, making it suitable for various rectification and voltage regulation applications.

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What is JAN1N3768?
- JAN1N3768 is a high-reliability, military-grade silicon power rectifier diode.
What are the key specifications of JAN1N3768?
- The key specifications include a maximum repetitive peak reverse voltage of 200 volts, average forward current of 35 amps, and a forward voltage drop of 1.0 volt at 35 amps.
In what technical solutions can JAN1N3768 be used?
- JAN1N3768 can be used in various technical solutions such as power supplies, inverters, battery chargers, and other high-reliability applications.
What are the advantages of using JAN1N3768 in technical solutions?
- The advantages include its high reliability, rugged construction, and ability to withstand high surge currents and temperatures.
What are the temperature considerations for JAN1N3768?
- JAN1N3768 has an operating temperature range of -65°C to +175°C, making it suitable for harsh environments.
Is JAN1N3768 suitable for high-frequency applications?
- No, JAN1N3768 is not recommended for high-frequency applications due to its relatively slow recovery time.
Can JAN1N3768 be used in automotive applications?
- Yes, JAN1N3768 can be used in certain automotive applications where high reliability and ruggedness are required.
What are the packaging options available for JAN1N3768?
- JAN1N3768 is available in various package types including DO-4, DO-5, and other military-standard packages.
Are there any specific handling or mounting requirements for JAN1N3768?
- JAN1N3768 should be handled and mounted according to standard semiconductor handling procedures to avoid damage.
Where can JAN1N3768 be sourced from?
- JAN1N3768 can be sourced from authorized distributors of military-grade electronic components or directly from manufacturers specializing in high-reliability diodes.