JAN1N5623

Product Overview

Category: Diode
Use: Rectification and voltage regulation
Characteristics: High current capability, low forward voltage drop
Package: Axial leaded
Essence: Semiconductor diode for power applications
Packaging/Quantity: Bulk packaging, quantity varies

Specifications

Forward Voltage Drop: 0.7V
Reverse Voltage: 200V
Forward Current: 3A
Operating Temperature: -65°C to +175°C

Detailed Pin Configuration

The JAN1N5623 diode has a standard axial leaded package with two leads. The anode is connected to the positive terminal and the cathode to the negative terminal.

Functional Features

High current capability allows for efficient power handling
Low forward voltage drop minimizes power loss
Fast switching speed for rapid response in rectification applications

Advantages and Disadvantages

Advantages

High current capability
Low forward voltage drop
Fast switching speed

Disadvantages

Limited reverse voltage tolerance compared to some other diodes
Sensitive to temperature variations

Working Principles

The JAN1N5623 diode operates on the principle of unidirectional conduction, allowing current to flow in one direction while blocking it in the reverse direction. When forward biased, it conducts current with minimal voltage drop, making it suitable for rectification and voltage regulation.

Detailed Application Field Plans

The JAN1N5623 diode is commonly used in power supply units, battery chargers, voltage regulators, and DC power circuits. Its high current capability and low forward voltage drop make it ideal for applications requiring efficient power handling and minimal power loss.

Detailed and Complete Alternative Models

JAN1N5622: Lower forward current rating
JAN1N5624: Higher reverse voltage rating
JAN1N5625: Fast recovery time for high-frequency applications

This completes the entry for JAN1N5623, providing comprehensive information about its category, specifications, features, and applications.

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What is JAN1N5623?
- JAN1N5623 is a high-reliability, military-grade silicon power rectifier diode.
What are the key specifications of JAN1N5623?
- The key specifications include a maximum repetitive peak reverse voltage of 200 volts, average forward current of 3 amps, and a forward voltage drop of 1 volt at 3 amps.
In what applications can JAN1N5623 be used?
- JAN1N5623 is commonly used in military and aerospace applications, as well as in industrial and high-reliability commercial applications where ruggedness and reliability are critical.
What are the advantages of using JAN1N5623 in technical solutions?
- JAN1N5623 offers high reliability, low forward voltage drop, and high surge current capability, making it suitable for demanding environments and critical applications.
Can JAN1N5623 be used in high-temperature environments?
- Yes, JAN1N5623 is designed to operate reliably in high-temperature environments, making it suitable for applications with elevated operating temperatures.
What are the potential failure modes of JAN1N5623?
- Potential failure modes include excessive forward voltage drop, reverse leakage current, and thermal runaway under extreme operating conditions.
Is JAN1N5623 suitable for use in radiation-prone environments?
- Yes, JAN1N5623 is designed to withstand radiation exposure, making it suitable for use in nuclear and space applications.
What are the packaging options available for JAN1N5623?
- JAN1N5623 is available in various package types, including axial-leaded, surface-mount, and stud-mount configurations to accommodate different mounting requirements.
Are there any specific handling or storage requirements for JAN1N5623?
- JAN1N5623 should be handled and stored according to industry best practices for ESD-sensitive devices to prevent damage during assembly and storage.
Where can I find detailed application notes and guidelines for using JAN1N5623 in technical solutions?
- Detailed application notes and guidelines for using JAN1N5623 can be found in the product datasheet, as well as in relevant military and aerospace standards and specifications.