LSM150JE3/TR13

Product Overview

Category: Semiconductor
Use: Power switching device
Characteristics: High voltage, high current capability
Package: TO-220AB
Essence: Silicon N-channel MOSFET
Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 150V
• Current Rating: 42A
• RDS(ON): 0.035 ohm
• Gate Threshold Voltage: 2.5V
• Power Dissipation: 200W

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• Low on-resistance
• Fast switching speed
• High input impedance
• Avalanche ruggedness

Advantages and Disadvantages

Advantages: - Efficient power switching - Low power dissipation - Suitable for high frequency applications

Disadvantages: - Gate drive requirements - Sensitivity to over-voltage conditions

Working Principles

The LSM150JE3/TR13 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

1. Switching Power Supplies: Utilized in high-efficiency power supply designs.
2. Motor Control: Used in motor drive circuits for efficient power management.
3. Inverters: Employed in DC to AC conversion systems for renewable energy applications.

Detailed and Complete Alternative Models

1. LSM100JE3/TR13: Lower voltage rating, suitable for lower power applications.
2. LSM200JE3/TR13: Higher voltage rating, suitable for higher power applications.
3. LSM150JE4/TR13: Enhanced performance version with lower RDS(ON).

This comprehensive entry provides detailed information about the LSM150JE3/TR13 semiconductor device, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.