PBSS4160PANP,115

Product Overview

• Category: Semiconductor
• Use: Power transistor
• Characteristics: High power handling capability, low on-state resistance, fast switching speed
• Package: SOT1061 (SC-74)
• Essence: NPN bipolar junction transistor
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Collector-emitter voltage (VCEO): 60 V
• Collector current (IC): 1 A
• Power dissipation (Ptot): 625 mW
• Transition frequency (fT): 250 MHz
• Operating temperature range: -55°C to +150°C

Detailed Pin Configuration

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Features

• High current gain
• Low saturation voltage
• Fast switching times

Advantages and Disadvantages

Advantages

• Suitable for high-speed switching applications
• Small package size
• Low power dissipation

Disadvantages

• Limited maximum collector current compared to some alternatives
• Sensitive to overvoltage conditions

Working Principles

The PBSS4160PANP,115 is a NPN bipolar junction transistor designed to amplify and switch electronic signals and electrical power. When a small current flows into the base of the transistor, it controls a much larger current between the collector and emitter.

Detailed Application Field Plans

The PBSS4160PANP,115 is commonly used in applications such as: - Switching power supplies - LED lighting - Motor control - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to PBSS4160PANP,115 include: - BC847B,215 - BC846BT,215 - BC817-25,115 - BC817-40,115

This completes the entry for PBSS4160PANP,115, providing comprehensive information about its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.