FDB031N08

Product Overview

Category

The FDB031N08 belongs to the category of power MOSFETs.

Use

It is used as a switching device in various electronic circuits and applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The FDB031N08 is typically available in a TO-263 package.

Essence

This MOSFET is essential for controlling high-power loads in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 80V
• Continuous Drain Current (ID): 75A
• RDS(ON) (at VGS = 10V): 3.1mΩ
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 40nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The FDB031N08 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability allows it to handle substantial power loads.
• Low on-resistance minimizes power loss and heat generation.
• Fast switching speed enables efficient control of electronic circuits.

Advantages

• Suitable for high-power applications
• Low power dissipation
• Enhanced efficiency in switching operations

Disadvantages

• May require additional circuitry for driving the gate
• Sensitivity to static electricity

Working Principles

The FDB031N08 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The FDB031N08 is widely used in: - Power supplies - Motor control - Inverters - DC-DC converters - Automotive applications

Detailed and Complete Alternative Models

Some alternative models to the FDB031N08 include: - IRF1405 - STP75NF75 - AUIRFN8403

In conclusion, the FDB031N08 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for various high-power electronic applications. While it has advantages such as low power dissipation and enhanced efficiency, it may require additional circuitry for gate driving and is sensitive to static electricity. Its working principle is based on field-effect transistor operation, and it finds extensive use in power supplies, motor control, inverters, and automotive applications. Alternative models like the IRF1405, STP75NF75, and AUIRFN8403 provide similar functionalities and can be considered based on specific application requirements.

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