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FQD18N20V2TM

FQD18N20V2TM

Introduction

The FQD18N20V2TM is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Electronic Components
  • Use: Power MOSFET for electronic circuits
  • Characteristics: High power handling capacity, low on-resistance, fast switching speed
  • Package: TO-252 (DPAK)
  • Essence: Efficient power management
  • Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on manufacturer

Specifications

  • Voltage Rating: 200V
  • Current Rating: 18A
  • On-Resistance: 0.09Ω
  • Gate Charge: 22nC
  • Operating Temperature Range: -55°C to 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DPAK-3

Detailed Pin Configuration

The FQD18N20V2TM typically has three pins: 1. Gate (G): Input terminal for controlling the MOSFET 2. Drain (D): Output terminal for the high-voltage connection 3. Source (S): Ground terminal

Functional Features

  • Fast Switching: Enables rapid on/off transitions
  • Low On-Resistance: Minimizes power loss and heat generation
  • High Voltage Rating: Suitable for high-power applications

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Fast switching speed
  • Low power dissipation

Disadvantages

  • Sensitivity to static electricity
  • Gate drive requirements

Working Principles

The FQD18N20V2TM operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When the gate-source voltage exceeds the threshold, the MOSFET turns on, allowing current to flow through.

Detailed Application Field Plans

The FQD18N20V2TM finds extensive use in various applications, including: - Switching power supplies - Motor control - LED lighting - Audio amplifiers - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to the FQD18N20V2TM include: - IRF1010E - STP16NF06L - AOD4184

In conclusion, the FQD18N20V2TM is a versatile power MOSFET with high power handling capacity, fast switching speed, and efficient power management capabilities. Its application spans across diverse fields, making it a crucial component in modern electronic systems.

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Texniki həllərdə FQD18N20V2TM tətbiqi ilə bağlı 10 ümumi sual və cavabı sadalayın

  1. What is the maximum drain-source voltage rating of FQD18N20V2TM?

    • The maximum drain-source voltage rating of FQD18N20V2TM is 200 volts.
  2. What is the continuous drain current rating of FQD18N20V2TM?

    • The continuous drain current rating of FQD18N20V2TM is 18 amperes.
  3. What is the on-resistance of FQD18N20V2TM?

    • The on-resistance of FQD18N20V2TM is typically 0.09 ohms.
  4. What is the gate threshold voltage of FQD18N20V2TM?

    • The gate threshold voltage of FQD18N20V2TM typically ranges from 2 to 4 volts.
  5. What is the power dissipation of FQD18N20V2TM?

    • The power dissipation of FQD18N20V2TM is typically 150 watts.
  6. What are the typical applications for FQD18N20V2TM?

    • FQD18N20V2TM is commonly used in power supplies, motor control, and other high-power switching applications.
  7. What is the operating temperature range of FQD18N20V2TM?

    • The operating temperature range of FQD18N20V2TM is typically -55°C to 175°C.
  8. Is FQD18N20V2TM suitable for automotive applications?

    • Yes, FQD18N20V2TM is suitable for automotive applications due to its high voltage and current ratings.
  9. Does FQD18N20V2TM require a heat sink for high-power applications?

    • Yes, for high-power applications, it is recommended to use a heat sink to dissipate heat effectively.
  10. What are the key differences between FQD18N20V2TM and its predecessor FQD18N20?

    • FQD18N20V2TM offers improved performance and reliability compared to its predecessor, with lower on-resistance and higher power dissipation capabilities.