FQP2N50: Semiconductor Device Encyclopedia Entry

Introduction

The FQP2N50 is a semiconductor device that belongs to the category of power MOSFETs. This entry provides an overview of the basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models of the FQP2N50.

Basic Information Overview

• Category: Power MOSFET
• Use: The FQP2N50 is commonly used in power supply applications, motor control, and other high voltage switching applications.
• Characteristics: It is characterized by its high voltage capability, low on-resistance, and fast switching speed.
• Package: The FQP2N50 is typically available in a TO-220 package.
• Essence: The essence of the FQP2N50 lies in its ability to efficiently handle high voltages and currents in various electronic circuits.
• Packaging/Quantity: It is usually packaged individually and available in varying quantities based on manufacturer specifications.

Specifications

The FQP2N50 has the following key specifications: - Drain-Source Voltage (VDS): 500V - Continuous Drain Current (ID): 2A - On-Resistance (RDS(on)): 3.5Ω - Gate-Source Voltage (VGS): ±30V - Total Power Dissipation (PD): 75W

Detailed Pin Configuration

The FQP2N50 typically has three pins: 1. Gate (G): Controls the conductivity between the source and drain terminals. 2. Drain (D): Connects to the positive supply voltage in most applications. 3. Source (S): Connects to the ground or return path in most applications.

Functional Features

The key functional features of the FQP2N50 include: - High Voltage Capability: Can withstand high drain-source voltages, making it suitable for high voltage applications. - Low On-Resistance: Results in minimal power dissipation and efficient operation. - Fast Switching Speed: Enables rapid switching in applications such as motor control and power supplies.

Advantages and Disadvantages

Advantages

• High voltage capability
• Low on-resistance
• Fast switching speed
• Suitable for high power applications

Disadvantages

• Higher gate capacitance compared to some alternative models
• May require additional circuitry for driving the gate in certain applications

Working Principles

The FQP2N50 operates based on the principles of field-effect transistors. When a sufficient voltage is applied to the gate terminal, it creates an electric field that controls the conductivity between the source and drain terminals, allowing current to flow through the device.

Detailed Application Field Plans

The FQP2N50 finds extensive use in the following application fields: - Power Supplies: Used in switch-mode power supplies and voltage regulators. - Motor Control: Employed in motor drive circuits for controlling speed and direction. - High Voltage Switching: Utilized in circuits requiring high voltage switching capabilities.

Detailed and Complete Alternative Models

Some alternative models to the FQP2N50 include: - IRF840: A similar power MOSFET with comparable voltage and current ratings. - STP16NF06: Offers similar characteristics and is suitable for many of the same applications. - FQPF10N60C: Provides higher current handling capability while maintaining similar voltage ratings.

In conclusion, the FQP2N50 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of high-power applications.

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