Şəkil təsvir ola bilər.
Məhsul təfərrüatları üçün spesifikasiyalara baxın.
FQP3N50C-F080

FQP3N50C-F080

Introduction

The FQP3N50C-F080 is a power MOSFET belonging to the category of electronic components. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Electronic Components
  • Use: Power MOSFET for electronic circuits
  • Characteristics: High power handling capacity, low on-state resistance, fast switching speed
  • Package: TO-220
  • Essence: Efficient power management in electronic devices
  • Packaging/Quantity: Typically packaged individually or in reels

Specifications

  • Voltage Rating: 500V
  • Current Rating: 3A
  • Power Dissipation: 80W
  • Operating Temperature Range: -55°C to 150°C
  • Gate-Source Voltage (Max): ±20V
  • Continuous Drain Current (at 25°C): 3A
  • RDS(ON) (Max) @ VGS = 10V: 1.6Ω

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • High voltage capability
  • Low spread of dynamic parameters
  • High switching speed
  • Improved dv/dt capability
  • Fully characterized capacitance and avalanche voltage

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Low on-state resistance
  • Fast switching speed
  • Enhanced power efficiency

Disadvantages

  • Sensitivity to static electricity
  • Requires careful handling during installation

Working Principles

The FQP3N50C-F080 operates based on the principle of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of a channel.

Detailed Application Field Plans

The FQP3N50C-F080 finds applications in various electronic circuits, including: - Switching power supplies - Motor control - Inverters - LED lighting - Audio amplifiers

Detailed and Complete Alternative Models

  • IRF540N
  • STP3NB90
  • FQPF3N80

In conclusion, the FQP3N50C-F080 power MOSFET offers high power handling capacity, low on-state resistance, and fast switching speed, making it suitable for diverse electronic applications.

[Word Count: 306]

Texniki həllərdə FQP3N50C-F080 tətbiqi ilə bağlı 10 ümumi sual və cavabı sadalayın

  1. What is the maximum drain-source voltage for FQP3N50C-F080?

    • The maximum drain-source voltage for FQP3N50C-F080 is 500V.
  2. What is the continuous drain current rating of FQP3N50C-F080?

    • The continuous drain current rating of FQP3N50C-F080 is 3A.
  3. What is the on-resistance of FQP3N50C-F080?

    • The on-resistance of FQP3N50C-F080 is typically 4.5 ohms.
  4. Can FQP3N50C-F080 be used in high-frequency applications?

    • Yes, FQP3N50C-F080 can be used in high-frequency applications due to its fast switching characteristics.
  5. What is the maximum junction temperature for FQP3N50C-F080?

    • The maximum junction temperature for FQP3N50C-F080 is 150°C.
  6. Is FQP3N50C-F080 suitable for use in power supplies?

    • Yes, FQP3N50C-F080 is suitable for use in power supplies and other power management applications.
  7. Does FQP3N50C-F080 require a heat sink for operation?

    • It is recommended to use a heat sink when operating FQP3N50C-F080 at high currents or in high-temperature environments.
  8. What type of package does FQP3N50C-F080 come in?

    • FQP3N50C-F080 comes in a TO-220 package.
  9. Can FQP3N50C-F080 be used in automotive applications?

    • Yes, FQP3N50C-F080 can be used in automotive applications, provided it meets the specific requirements and standards for automotive electronics.
  10. What are some common applications for FQP3N50C-F080?

    • Common applications for FQP3N50C-F080 include motor control, lighting, power supplies, and DC-DC converters.