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FQT1N80TF-WS
Product Category
The FQT1N80TF-WS belongs to the category of power MOSFETs.
Basic Information Overview
- Use: The FQT1N80TF-WS is used as a power switch in various electronic circuits and applications.
- Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
- Package: The FQT1N80TF-WS is typically available in a TO-220 package.
- Essence: Its essence lies in providing efficient power switching capabilities in electronic devices.
- Packaging/Quantity: It is commonly packaged individually and sold in quantities based on the requirements of the customer.
Specifications
- Voltage Rating: 800V
- Current Rating: 1A
- Package Type: TO-220
- On-State Resistance: 1.8Ω
- Gate Charge: 12nC
- Switching Speed: 50ns
Detailed Pin Configuration
The FQT1N80TF-WS typically has three pins: 1. Gate (G): Input pin for controlling the switching operation. 2. Drain (D): Output pin connected to the load or circuit being controlled. 3. Source (S): Ground reference for the MOSFET.
Functional Features
- High voltage capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
Advantages and Disadvantages
Advantages: - Efficient power switching - Suitable for high-voltage applications - Low power dissipation
Disadvantages: - Sensitive to static electricity - Gate driver circuitry required for proper operation
Working Principles
The FQT1N80TF-WS operates based on the principle of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The FQT1N80TF-WS finds extensive use in various applications such as: - Switched-mode power supplies - Motor control circuits - LED lighting systems - Solar inverters
Detailed and Complete Alternative Models
Some alternative models to the FQT1N80TF-WS include: - IRF840 - STP16NF06L - FQP27P06
This completes the English editing encyclopedia entry structure format for the FQT1N80TF-WS, covering its product category, basic information overview, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
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What is the FQT1N80TF-WS?
- The FQT1N80TF-WS is a power MOSFET designed for high-speed switching applications.
What are the key features of the FQT1N80TF-WS?
- The FQT1N80TF-WS features low on-resistance, fast switching speed, and high ruggedness.
What are the typical applications of the FQT1N80TF-WS?
- Typical applications include power supplies, motor control, lighting, and DC-DC converters.
What is the maximum drain-source voltage rating of the FQT1N80TF-WS?
- The maximum drain-source voltage rating is 800V.
What is the maximum continuous drain current of the FQT1N80TF-WS?
- The maximum continuous drain current is 1A.
What is the typical gate charge of the FQT1N80TF-WS?
- The typical gate charge is 8nC.
Does the FQT1N80TF-WS require a heat sink for operation?
- It depends on the application and the power dissipation requirements. In some cases, a heat sink may be necessary.
What is the operating temperature range of the FQT1N80TF-WS?
- The operating temperature range is typically -55°C to 150°C.
Is the FQT1N80TF-WS suitable for automotive applications?
- Yes, the FQT1N80TF-WS is suitable for automotive applications due to its ruggedness and reliability.
Where can I find detailed technical specifications and application notes for the FQT1N80TF-WS?
- Detailed technical specifications and application notes can be found in the product datasheet provided by the manufacturer.