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NDD60N745U1-35G
Product Overview
Category
The NDD60N745U1-35G belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic devices and systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The NDD60N745U1-35G is typically available in a TO-252 package.
Essence
This power MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
The NDD60N745U1-35G is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 60A
- On-Resistance (RDS(on)): 35mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 100nC
- Operating Temperature: -55°C to 150°C
Detailed Pin Configuration
The NDD60N745U1-35G typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid control of power flow.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Low on-resistance for improved efficiency
- Fast switching speed for precise power control
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- May require additional circuitry for optimal performance in some applications
Working Principles
The NDD60N745U1-35G operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The NDD60N745U1-35G is commonly used in the following applications: - Switched-mode power supplies - Motor control systems - Inverters and converters for renewable energy systems - Industrial automation equipment
Detailed and Complete Alternative Models
Some alternative models to the NDD60N745U1-35G include: - IRF840 - FDP8870 - STP80NF70
In conclusion, the NDD60N745U1-35G power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management applications across various industries.
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What is NDD60N745U1-35G?
- NDD60N745U1-35G is a high-power RF transistor designed for use in technical solutions requiring high-frequency amplification.
What is the maximum power output of NDD60N745U1-35G?
- The maximum power output of NDD60N745U1-35G is typically 60 watts.
What frequency range does NDD60N745U1-35G cover?
- NDD60N745U1-35G covers a frequency range of approximately 700MHz to 800MHz.
What are the typical applications for NDD60N745U1-35G?
- NDD60N745U1-35G is commonly used in applications such as base stations, wireless infrastructure, and other high-power RF amplification systems.
What are the key features of NDD60N745U1-35G?
- Some key features of NDD60N745U1-35G include high power gain, high efficiency, and excellent linearity.
What are the recommended operating conditions for NDD60N745U1-35G?
- NDD60N745U1-35G operates best under specified voltage, current, and temperature conditions provided in the datasheet.
Is NDD60N745U1-35G suitable for broadband applications?
- Yes, NDD60N745U1-35G is suitable for broadband applications within its specified frequency range.
Does NDD60N745U1-35G require any special cooling or heat dissipation measures?
- Depending on the application and operating conditions, NDD60N745U1-35G may require appropriate thermal management to ensure optimal performance and reliability.
Can NDD60N745U1-35G be used in mobile communication systems?
- Yes, NDD60N745U1-35G can be utilized in mobile communication systems where high-power RF amplification is required.
Where can I find detailed technical specifications and application notes for NDD60N745U1-35G?
- Detailed technical specifications and application notes for NDD60N745U1-35G can be found in the product datasheet provided by the manufacturer or distributor.