NTD4809NA-35G

Introduction

The NTD4809NA-35G is a power MOSFET belonging to the category of electronic components. It is widely used in various electronic circuits and systems due to its specific characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: The NTD4809NA-35G is used as a switching device in power electronics applications, such as voltage regulators, motor control, and power management systems.
• Characteristics: This MOSFET is known for its high efficiency, low on-state resistance, and fast switching speed.
• Package: The NTD4809NA-35G is typically available in a TO-252 package, also known as DPAK (TO-263) package.
• Essence: The essence of this component lies in its ability to efficiently control and switch high-power loads in various electronic systems.
• Packaging/Quantity: It is commonly packaged in reels or tubes, with varying quantities based on manufacturer specifications.

Specifications

• Voltage Rating: 30V
• Current Rating: 120A
• On-State Resistance: 3.5mΩ
• Gate Threshold Voltage: 2V
• Operating Temperature Range: -55°C to 175°C
• Package Type: TO-252 (DPAK)

Detailed Pin Configuration

The NTD4809NA-35G typically has three pins: Gate, Drain, and Source. The pin configuration is as follows: - Pin 1 (Gate): Input for controlling the switching operation. - Pin 2 (Drain): Connection point for the load. - Pin 3 (Source): Common reference point for the source of the current flow.

Functional Features

• High Efficiency: The MOSFET offers low on-state resistance, resulting in minimal power loss during operation.
• Fast Switching Speed: It enables rapid switching transitions, making it suitable for high-frequency applications.
• Low Gate Threshold Voltage: Allows for easy interfacing with control circuitry.

Advantages and Disadvantages

Advantages: - High efficiency and low power dissipation. - Fast switching speed. - Compatibility with low-voltage control signals.

Disadvantages: - Susceptible to damage from overvoltage or overcurrent conditions. - Requires careful consideration of gate drive circuitry to avoid potential issues.

Working Principles

The NTD4809NA-35G operates based on the principles of field-effect transistors. When a sufficient voltage is applied to the gate terminal, it creates an electric field that allows current to flow between the drain and source terminals, effectively controlling the power flow through the device.

Detailed Application Field Plans

The NTD4809NA-35G finds extensive use in the following application fields: - Voltage Regulators: Utilized for efficient voltage regulation in power supply units. - Motor Control: Enables precise control of motor speed and direction in various industrial and automotive applications. - Power Management Systems: Integrated into power distribution and management systems for optimal energy utilization.

Detailed and Complete Alternative Models

• NTD4809N: Similar specifications and characteristics, suitable as an alternative option.
• NTD4809P: Offers comparable performance with slight variations in electrical parameters.
• NTD4810NA-25G: Higher voltage rating with similar current handling capabilities, suitable for specific applications.

In conclusion, the NTD4809NA-35G power MOSFET serves as a crucial component in modern electronic systems, offering high efficiency, fast switching speed, and versatile application possibilities across various industries.

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