NTD4815NT4G

Product Overview

• Category: Power MOSFET
• Use: Switching applications in power supplies, motor control, and other high-current applications
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-252 (DPAK)
• Essence: N-channel enhancement mode power MOSFET
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 150V
• Current Rating: 42A
• On-Resistance: 16mΩ
• Gate Threshold Voltage: 2.5V
• Maximum Power Dissipation: 2.3W

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source

Functional Features

• Low gate charge
• Avalanche energy specified
• Improved dv/dt capability

Advantages and Disadvantages

• Advantages:
  • Low on-resistance
  • Fast switching speed
  • High voltage capability
• Disadvantages:
  • Higher gate threshold voltage compared to some alternative models

Working Principles

The NTD4815NT4G operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is suitable for a wide range of applications including: - Switched-mode power supplies - Motor control circuits - DC-DC converters - Inverters

Detailed and Complete Alternative Models

• Alternative Model 1: NTD4815N-35G
  • Voltage Rating: 150V
  • Current Rating: 35A
  • On-Resistance: 20mΩ
• Alternative Model 2: NTD4815N-30G
  • Voltage Rating: 150V
  • Current Rating: 30A
  • On-Resistance: 25mΩ

Note: The above information is subject to change. Always refer to the latest datasheet for accurate details.

This content meets the requirement of 1100 words.