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NTD4856N-1G
Product Overview
Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high-current applications
Characteristics: High current capability, low on-resistance, fast switching speed
Package: D2PAK-7
Essence: N-channel enhancement mode field-effect transistor
Packaging/Quantity: Tape & Reel (800 units per reel)
Specifications
- Drain-to-Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 94A
- Rds(on) (Max) @ Vgs = 10V: 3.5mΩ
- Gate-to-Source Voltage (Vgs): ±20V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
- Gate
- Drain
- Source
- Source
- Source
- Drain
- Drain
Functional Features
- Low gate charge
- Avalanche energy specified
- Improved dv/dt capability
Advantages
- High current handling capability
- Low on-resistance for reduced power dissipation
- Fast switching speed for improved efficiency
Disadvantages
- Sensitive to static electricity
- Requires careful handling during assembly
Working Principles
The NTD4856N-1G operates based on the principles of an N-channel enhancement mode field-effect transistor. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
- Power Supplies: Used in high-efficiency DC-DC converters and voltage regulation circuits.
- Motor Control: Enables efficient switching in motor drive circuits, improving overall system performance.
- High-Current Applications: Suitable for use in high-current load switching applications due to its low on-resistance.
Detailed and Complete Alternative Models
- NTD4809N-1G
- NTD5867N-1G
- NTD4906N-1G
- NTD4950N-1G
This completes the entry for the NTD4856N-1G according to the English editing encyclopedia structure format.
Texniki həllərdə NTD4856N-1G tətbiqi ilə bağlı 10 ümumi sual və cavabı sadalayın
What is NTD4856N-1G?
- NTD4856N-1G is a power MOSFET designed for various technical solutions requiring high efficiency and low power dissipation.
What are the key features of NTD4856N-1G?
- The key features include low on-resistance, fast switching speed, high current capability, and a small form factor.
What are the typical applications of NTD4856N-1G?
- Typical applications include power supplies, motor control, battery management, and LED lighting.
What is the maximum voltage and current rating for NTD4856N-1G?
- The maximum voltage rating is typically around 30V, and the current rating is in the range of several tens of amperes.
How does NTD4856N-1G contribute to energy efficiency in technical solutions?
- NTD4856N-1G's low on-resistance and fast switching speed help minimize power losses and improve overall energy efficiency.
What are the thermal considerations when using NTD4856N-1G in technical solutions?
- Proper heat sinking and thermal management are important to ensure the MOSFET operates within its temperature limits for reliable performance.
Are there any specific layout or PCB design considerations for NTD4856N-1G?
- It's important to minimize parasitic inductance and capacitance in the layout to optimize the MOSFET's switching performance.
Does NTD4856N-1G require any special gate driving considerations?
- Proper gate driving voltage and current levels should be provided to ensure efficient and reliable switching of the MOSFET.
What are the potential challenges when integrating NTD4856N-1G into a technical solution?
- Challenges may include EMI/EMC considerations, protection circuitry implementation, and ensuring compatibility with other system components.
Where can I find detailed technical specifications and application notes for NTD4856N-1G?
- Detailed technical specifications and application notes can be found on the manufacturer's website or in the product datasheet.