NTD4860NT4G
Product Category: Power MOSFET
Basic Information Overview: - Category: Semiconductor component - Use: Power switching applications - Characteristics: High voltage, high current capability, low on-resistance - Package: D2PAK (TO-263) - Essence: N-channel enhancement mode power MOSFET - Packaging/Quantity: Tape & Reel, 800 units per reel
Specifications: - Voltage Rating: 60V - Current Rating: 80A - On-Resistance: 4.8mΩ - Gate Charge: 110nC - Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain
Functional Features: - Low gate charge for fast switching - Excellent thermal performance - Avalanche energy specified - RoHS compliant
Advantages and Disadvantages: - Advantages: - Low on-resistance - High current handling capability - Wide operating temperature range - Disadvantages: - Relatively high gate charge - Large package size
Working Principles: The NTD4860NT4G operates based on the principles of field-effect transistors, utilizing the control of voltage applied to the gate terminal to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans: This power MOSFET is suitable for a wide range of applications including: - Switching power supplies - Motor control - DC-DC converters - Inverters
Detailed and Complete Alternative Models: - NTD5867NLW-1G - NTD4960N-1G - NTD5865NLW-1G - NTD4960N-1G
This completes the entry for NTD4860NT4G in the English editing encyclopedia format.
What is NTD4860NT4G?
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