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NTD5406NT4G

NTD5406NT4G

Product Overview

Category

The NTD5406NT4G belongs to the category of power MOSFETs.

Use

It is used as a high-performance, energy-efficient switching component in various electronic circuits and applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Enhanced thermal performance

Package

The NTD5406NT4G is typically available in a TO-252 (DPAK) package.

Essence

The essence of this product lies in its ability to efficiently control and switch high currents with minimal power loss.

Packaging/Quantity

It is commonly packaged in reels containing a specific quantity, typically 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 33A
  • On-Resistance (RDS(on)): 8.5mΩ
  • Power Dissipation (PD): 2.3W
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The NTD5406NT4G features a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

  • Low gate charge
  • Avalanche energy specified
  • Improved dv/dt capability
  • RoHS compliant

Advantages and Disadvantages

Advantages

  • High voltage capability allows for versatile use
  • Low on-resistance minimizes power loss
  • Fast switching speed enhances efficiency

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The NTD5406NT4G operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel between the drain and source terminals.

Detailed Application Field Plans

The NTD5406NT4G is widely used in: - Switching power supplies - Motor control circuits - LED lighting applications - Battery management systems - Automotive electronics

Detailed and Complete Alternative Models

  • NTD5867NLW-1G
  • NTD4809N-35G
  • NTD4906N-35G
  • NTD4960N-35G

In conclusion, the NTD5406NT4G power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, making it a valuable component in modern circuit design.

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Texniki həllərdə NTD5406NT4G tətbiqi ilə bağlı 10 ümumi sual və cavabı sadalayın

Sure, here are 10 common questions and answers related to the application of NTD5406NT4G in technical solutions:

  1. Question: What is the maximum drain-source voltage (VDS) for NTD5406NT4G?
    Answer: The maximum drain-source voltage (VDS) for NTD5406NT4G is 60 volts.

  2. Question: What is the continuous drain current (ID) rating for NTD5406NT4G?
    Answer: The continuous drain current (ID) rating for NTD5406NT4G is 33 amperes.

  3. Question: What is the on-state resistance (RDS(on)) for NTD5406NT4G?
    Answer: The on-state resistance (RDS(on)) for NTD5406NT4G is typically 9.5 milliohms at VGS = 10V.

  4. Question: What is the gate-source voltage (VGS) range for NTD5406NT4G?
    Answer: The gate-source voltage (VGS) range for NTD5406NT4G is ±20 volts.

  5. Question: Is NTD5406NT4G suitable for use in power management applications?
    Answer: Yes, NTD5406NT4G is suitable for use in power management applications due to its high voltage and current ratings.

  6. Question: Can NTD5406NT4G be used in automotive applications?
    Answer: Yes, NTD5406NT4G is designed for automotive applications and complies with AEC-Q101 standards.

  7. Question: What is the operating temperature range for NTD5406NT4G?
    Answer: The operating temperature range for NTD5406NT4G is -55°C to 175°C.

  8. Question: Does NTD5406NT4G have built-in ESD protection?
    Answer: Yes, NTD5406NT4G features built-in ESD protection, making it suitable for robust applications.

  9. Question: Can NTD5406NT4G be used in switching power supplies?
    Answer: Yes, NTD5406NT4G can be used in switching power supplies due to its high current and voltage handling capabilities.

  10. Question: What package type is NTD5406NT4G available in?
    Answer: NTD5406NT4G is available in a D2PAK-3 package, which provides good thermal performance and high power dissipation capability.