ON Semiconductor
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NTD65N03R-1G
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NTD65N03R-1G

Product Overview

Category

The NTD65N03R-1G belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification purposes.

Characteristics

  • Low on-resistance
  • High current capability
  • Fast switching speed
  • Low gate charge

Package

The NTD65N03R-1G is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management in various electronic applications.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 65A
  • RDS(ON) (Max) @ VGS = 10V: 5.5mΩ
  • Gate-Source Voltage (VGS) (Max): ±20V
  • Total Gate Charge (Qg): 22nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The NTD65N03R-1G typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-resistance for minimal power dissipation
  • High current handling capability for robust performance
  • Fast switching speed for efficient operation
  • Low gate charge for reduced drive requirements

Advantages

  • Efficient power management
  • Suitable for high-current applications
  • Fast response times

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

The NTD65N03R-1G operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Power supplies - Motor control - LED lighting - Battery management systems - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the NTD65N03R-1G include: - IRF3205 - FDP8870 - AOD4184

In conclusion, the NTD65N03R-1G power MOSFET offers efficient power management and high current capabilities, making it suitable for a wide range of electronic applications.

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Texniki həllərdə NTD65N03R-1G tətbiqi ilə bağlı 10 ümumi sual və cavabı sadalayın

  1. What is the NTD65N03R-1G?

    • The NTD65N03R-1G is a power MOSFET designed for high current, low voltage applications.

  2. What are the key features of the NTD65N03R-1G?

    • The NTD65N03R-1G features a low on-resistance, high current capability, and a compact package design.

  3. What are the typical applications of the NTD65N03R-1G?

    • Typical applications include power supplies, motor control, battery management, and other high-current switching applications.

  4. What is the maximum current rating of the NTD65N03R-1G?

    • The maximum continuous drain current rating is typically around 60A.

  5. What is the voltage rating of the NTD65N03R-1G?

    • The NTD65N03R-1G is designed for low voltage applications, typically with a maximum voltage rating of around 30V.

  6. What is the thermal resistance of the NTD65N03R-1G?

    • The thermal resistance from junction to ambient is typically around 50°C/W.

  7. Is the NTD65N03R-1G suitable for automotive applications?

    • Yes, the NTD65N03R-1G is often used in automotive systems such as electronic control units (ECUs) and motor control modules.

  8. Does the NTD65N03R-1G require a heat sink for high-power applications?

    • For high-power applications, it is recommended to use a heat sink to ensure proper thermal management.

  9. Can the NTD65N03R-1G be used in parallel to increase current handling capability?

    • Yes, multiple NTD65N03R-1G MOSFETs can be used in parallel to increase the overall current handling capability.

  10. Where can I find the detailed datasheet for the NTD65N03R-1G?

    • The detailed datasheet for the NTD65N03R-1G can be found on the manufacturer's website or through authorized distributors.