ON Semiconductor
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SVD5865NLT4G
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SVD5865NLT4G

Product Overview

Category

The SVD5865NLT4G belongs to the category of power MOSFETs.

Use

It is used as a high-voltage, fast-switching N-channel enhancement-mode power MOSFET.

Characteristics

  • High voltage capability
  • Low gate charge
  • Fast switching speed
  • Low on-resistance

Package

The SVD5865NLT4G is typically available in a TO-252 (DPAK) package.

Essence

The essence of the SVD5865NLT4G lies in its ability to efficiently control and switch high voltages in various electronic applications.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 30A
  • RDS(ON) (Max) @ VGS = 10V: 0.022Ω
  • Gate-Source Voltage (VGS) ±20V
  • Total Power Dissipation (PD): 2.5W

Detailed Pin Configuration

The SVD5865NLT4G typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low gate charge enables fast switching, reducing power loss.
  • Low on-resistance results in minimal conduction losses.

Advantages

  • Efficiently controls high voltages
  • Fast switching speed
  • Low power dissipation

Disadvantages

  • May require careful handling due to high voltage capabilities
  • Sensitivity to static electricity

Working Principles

The SVD5865NLT4G operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel between the drain and source terminals.

Detailed Application Field Plans

The SVD5865NLT4G finds application in various fields including: - Switching power supplies - Motor control - LED lighting - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SVD5865NLT4G include: - IRF3205 - FDP8870 - STP55NF06L

In conclusion, the SVD5865NLT4G is a high-voltage power MOSFET with fast-switching characteristics, making it suitable for a wide range of power applications.

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Texniki həllərdə SVD5865NLT4G tətbiqi ilə bağlı 10 ümumi sual və cavabı sadalayın

  1. What is SVD5865NLT4G?

    • SVD5865NLT4G is a Schottky diode rectifier designed for high-speed switching applications.

  2. What are the key features of SVD5865NLT4G?

    • The key features include low forward voltage drop, high frequency operation, and high junction temperature capability.

  3. What are the typical applications of SVD5865NLT4G?

    • Typical applications include freewheeling, polarity protection, and high-frequency DC-DC converters.

  4. What is the maximum forward voltage of SVD5865NLT4G?

    • The maximum forward voltage is typically around 0.55V at 5A.

  5. What is the reverse recovery time of SVD5865NLT4G?

    • The reverse recovery time is typically around 15ns.

  6. What is the maximum junction temperature of SVD5865NLT4G?

    • The maximum junction temperature is 150°C.

  7. What is the package type of SVD5865NLT4G?

    • SVD5865NLT4G comes in a surface mount SMB package.

  8. What are the recommended operating conditions for SVD5865NLT4G?

    • The recommended operating conditions include a maximum average forward current of 5A and an operating temperature range of -65°C to 150°C.

  9. What are the advantages of using SVD5865NLT4G in high-speed switching applications?

    • The advantages include low power loss, high efficiency, and fast switching speed.

  10. Where can I find detailed technical specifications for SVD5865NLT4G?

    • Detailed technical specifications can be found in the datasheet provided by the manufacturer or distributor of the component.