Şəkil təsvir ola bilər.
Məhsul təfərrüatları üçün spesifikasiyalara baxın.
NTHS1206N06N2001KE

NTHS1206N06N2001KE

Product Overview

Category

The NTHS1206N06N2001KE belongs to the category of electronic components, specifically a high-power N-channel MOSFET.

Use

It is used in various electronic circuits and power systems for switching and amplification purposes.

Characteristics

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive requirement

Package

The NTHS1206N06N2001KE is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 120A
  • RDS(ON) (at VGS = 10V): 6mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 200nC

Detailed Pin Configuration

The NTHS1206N06N2001KE has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

  • High current-carrying capability
  • Low conduction losses
  • Fast switching characteristics
  • Compatibility with low-voltage drive circuits

Advantages

  • Efficient power handling
  • Reduced heat dissipation
  • Enhanced system reliability
  • Suitable for high-frequency applications

Disadvantages

  • Sensitivity to static electricity
  • Potential for thermal runaway if not properly managed

Working Principles

The NTHS1206N06N2001KE operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The NTHS1206N06N2001KE is widely used in: - Switch-mode power supplies - Motor control systems - Electronic load switches - Class D audio amplifiers - LED lighting drivers

Detailed and Complete Alternative Models

Some alternative models to the NTHS1206N06N2001KE include: - IRF3205 - FDP8878 - STP80NF55-06

In conclusion, the NTHS1206N06N2001KE is a high-power N-channel MOSFET that offers efficient power handling, fast switching characteristics, and compatibility with various electronic applications. Its use in diverse fields such as power supplies, motor control, and audio amplification highlights its versatility and importance in modern electronic systems.

Word Count: 332

Texniki həllərdə NTHS1206N06N2001KE tətbiqi ilə bağlı 10 ümumi sual və cavabı sadalayın

  1. What is NTHS1206N06N2001KE?

    • NTHS1206N06N2001KE is a surface mount, high temperature silicon nitride (Si3N4) based thin film resistor designed for use in high reliability applications.
  2. What are the key features of NTHS1206N06N2001KE?

    • The key features include high temperature stability, low noise, and excellent long-term stability.
  3. What are the typical applications for NTHS1206N06N2001KE?

    • Typical applications include power supplies, industrial controls, automotive electronics, and aerospace systems.
  4. What is the power rating of NTHS1206N06N2001KE?

    • The power rating is 0.125W.
  5. What is the resistance value of NTHS1206N06N2001KE?

    • The resistance value is 2 kΩ.
  6. What is the maximum operating temperature of NTHS1206N06N2001KE?

    • The maximum operating temperature is 250°C.
  7. Is NTHS1206N06N2001KE RoHS compliant?

    • Yes, it is RoHS compliant.
  8. Can NTHS1206N06N2001KE be used in high vibration environments?

    • Yes, it is suitable for use in high vibration environments.
  9. Does NTHS1206N06N2001KE have good solderability?

    • Yes, it has excellent solderability.
  10. What are the packaging options available for NTHS1206N06N2001KE?

    • It is available in tape and reel packaging for automated assembly.