ESH2BHE3_A/H Product Overview

Introduction

The ESH2BHE3_A/H is a versatile electronic component that belongs to the category of high-speed, low-power Schottky diodes. This entry provides an in-depth overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: High-speed, low-power Schottky diodes
• Use: The ESH2BHE3_A/H is commonly used in electronic circuits for its fast switching speed and low forward voltage drop.
• Characteristics: It exhibits excellent thermal performance, low leakage current, and high reliability.
• Package: The diode is typically housed in a small surface-mount package.
• Essence: Its essence lies in providing efficient and reliable rectification and signal demodulation in various electronic applications.
• Packaging/Quantity: The diodes are usually supplied in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Forward Voltage Drop: Typically around 0.3V at a forward current of 1A
• Reverse Leakage Current: In the order of nanoamperes at rated voltage
• Maximum Operating Temperature: Commonly rated for operation up to 125°C
• Storage Temperature Range: -55°C to 150°C
• Maximum Reverse Voltage: Varies based on specific model, often in the range of 20V to 100V

Detailed Pin Configuration

The ESH2BHE3_A/H follows a standard SOD-123 package outline, with two pins for connection. The pinout configuration is as follows: - Pin 1: Anode - Pin 2: Cathode

Functional Features

• Fast Switching Speed: Enables rapid response in electronic circuits.
• Low Forward Voltage Drop: Minimizes power dissipation and heat generation.
• High Reliability: Ensures consistent performance over a wide range of operating conditions.

Advantages and Disadvantages

Advantages

• Efficient energy conversion
• Compact form factor
• Suitable for high-frequency applications

Disadvantages

• Limited reverse voltage capability
• Sensitivity to voltage transients

Working Principles

The ESH2BHE3_A/H operates based on the principles of Schottky barrier rectification. When a forward bias is applied, the low forward voltage drop allows for efficient current flow, while the Schottky barrier minimizes charge storage and enhances switching speed.

Detailed Application Field Plans

The ESH2BHE3_A/H finds extensive use in the following application fields: - Switching power supplies - Voltage clamping circuits - Signal demodulation - Overvoltage protection circuits

Detailed and Complete Alternative Models

Several alternative models can be considered based on specific application requirements, including: - ESH1BHE3A/H: Lower forward voltage drop variant - ESH3BHE3A/H: Higher reverse voltage variant - ESH2CHE3_A/H: Enhanced thermal performance variant

In conclusion, the ESH2BHE3_A/H serves as a crucial component in modern electronic systems, offering high-speed, low-power rectification and signal demodulation capabilities. Its compact form factor and reliable performance make it a preferred choice in various high-frequency applications.

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