MB10H90HE3_A/I

Product Overview

Category: Integrated Circuit
Use: Voltage Level Shifter
Characteristics: High-speed, low-power consumption
Package: SOIC-16
Essence: Efficient voltage level shifting
Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

Input Voltage Range: 1.65V to 5.5V
Output Voltage Range: -0.5V to 5.5V
Propagation Delay: 6ns (max)
Operating Temperature Range: -40°C to 125°C

Detailed Pin Configuration

The MB10H90HE3_A/I features a standard SOIC-16 pin configuration with specific pins allocated for input and output voltage, ground, and power supply.

Functional Features

Bi-directional voltage level shifting
High-speed operation
Low-power consumption
ESD protection

Advantages and Disadvantages

Advantages: - Wide voltage range support - Fast propagation delay - ESD protection - Low power consumption

Disadvantages: - Sensitive to voltage spikes - Limited current drive capability

Working Principles

The MB10H90HE3_A/I operates by utilizing a combination of MOSFETs to efficiently shift the voltage levels of digital signals while maintaining high-speed performance and low power consumption.

Detailed Application Field Plans

This voltage level shifter is ideal for applications requiring bi-directional voltage translation such as in communication interfaces, data acquisition systems, and battery-powered devices. It can also be used in mixed-voltage systems where different voltage domains coexist.

Detailed and Complete Alternative Models

SN74LVC8T245
TXS0108E
PCA9306

Note: The above alternative models provide similar functionality and compatibility.

This comprehensive entry provides an in-depth understanding of the MB10H90HE3_A/I, covering its basic information, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Texniki həllərdə MB10H90HE3_A/I tətbiqi ilə bağlı 10 ümumi sual və cavabı sadalayın

Sure, here are 10 common questions and answers related to the application of MB10H90HE3_A/I in technical solutions:

Q: What is the maximum repetitive peak reverse voltage (VRRM) of MB10H90HE3_A/I? A: The maximum repetitive peak reverse voltage (VRRM) of MB10H90HE3_A/I is 1000V.
Q: What is the average forward current (IF(AV)) rating of MB10H90HE3_A/I? A: The average forward current (IF(AV)) rating of MB10H90HE3_A/I is 1A.
Q: Can MB10H90HE3_A/I be used in bridge rectifier applications? A: Yes, MB10H90HE3_A/I can be used in bridge rectifier applications.
Q: What is the maximum junction temperature (Tj) for MB10H90HE3_A/I? A: The maximum junction temperature (Tj) for MB10H90HE3_A/I is 150°C.
Q: Is MB10H90HE3_A/I suitable for use in power supplies and inverters? A: Yes, MB10H90HE3_A/I is suitable for use in power supplies and inverters.
Q: What is the forward voltage drop (VF) of MB10H90HE3_A/I at a specific current? A: The forward voltage drop (VF) of MB10H90HE3_A/I varies with current, typically around 1.1V at 1A.
Q: Can MB10H90HE3_A/I be used in high-frequency rectification applications? A: Yes, MB10H90HE3_A/I can be used in high-frequency rectification applications.
Q: Does MB10H90HE3_A/I have a low leakage current? A: Yes, MB10H90HE3_A/I has a low leakage current, making it suitable for energy-efficient designs.
Q: What package type does MB10H90HE3_A/I come in? A: MB10H90HE3_A/I comes in a surface mount D²PAK package.
Q: Are there any specific thermal considerations when using MB10H90HE3_A/I in a design? A: It is recommended to consider proper heat sinking and thermal management due to the power dissipation characteristics of MB10H90HE3_A/I.

I hope these questions and answers are helpful for your technical solutions involving MB10H90HE3_A/I! If you need further assistance, feel free to ask.