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SS32HE3_A/H
Product Overview
Belongs to: Diode
Category: Schottky diode
Use: Rectification, voltage clamping, and reverse polarity protection
Characteristics: Low forward voltage drop, fast switching speed, low leakage current
Package: SOD-123
Essence: Semiconductor device for power management
Packaging/Quantity: Tape & Reel, 3000 units per reel
Specifications
- Forward Voltage Drop: 0.38V at 3A
- Reverse Voltage: 20V
- Forward Current: 3A
- Operating Temperature Range: -65°C to +125°C
Detailed Pin Configuration
The SS32HE3_A/H has two pins in the SOD-123 package. The anode is connected to pin 1, and the cathode is connected to pin 2.
Functional Features
- Fast switching speed for high-efficiency applications
- Low forward voltage drop minimizes power loss
- Low leakage current for improved system reliability
Advantages and Disadvantages
Advantages: - High efficiency due to low forward voltage drop - Fast switching speed for rapid response in circuits - Low leakage current enhances system reliability
Disadvantages: - Limited reverse voltage capability compared to other diode types - Sensitive to temperature variations
Working Principles
The SS32HE3_A/H operates based on the Schottky barrier principle, where a metal-semiconductor junction is formed, resulting in a lower forward voltage drop compared to standard PN-junction diodes. This allows for faster switching speeds and reduced power dissipation.
Detailed Application Field Plans
The SS32HE3_A/H is widely used in various electronic devices and systems, including: - Power supplies - Voltage clamping circuits - Reverse polarity protection circuits - DC-DC converters - Battery charging circuits
Detailed and Complete Alternative Models
- SS34HE3_A/H: Similar characteristics with higher reverse voltage of 40V
- SS36HE3_A/H: Higher reverse voltage of 60V for increased protection
- SS310HE3_A/H: Higher forward current rating of 3A for heavier loads
This comprehensive range of alternative models provides flexibility in design and application requirements.
This entry provides a detailed overview of the SS32HE3_A/H Schottky diode, covering its product information, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Texniki həllərdə SS32HE3_A/H tətbiqi ilə bağlı 10 ümumi sual və cavabı sadalayın
Sure, here are 10 common questions and answers related to the application of SS32HE3_A/H in technical solutions:
Q: What is the maximum repetitive peak reverse voltage for SS32HE3_A/H? A: The maximum repetitive peak reverse voltage for SS32HE3_A/H is 20V.
Q: What is the forward continuous current rating for SS32HE3_A/H? A: The forward continuous current rating for SS32HE3_A/H is 3A.
Q: Can SS32HE3_A/H be used in high-temperature environments? A: Yes, SS32HE3_A/H is designed to operate in high-temperature environments, with a maximum junction temperature of 150°C.
Q: What is the typical forward voltage drop for SS32HE3_A/H at 3A? A: The typical forward voltage drop for SS32HE3_A/H at 3A is 0.49V.
Q: Is SS32HE3_A/H suitable for use in automotive applications? A: Yes, SS32HE3_A/H is suitable for use in automotive applications, as it meets the requirements for automotive electronic systems.
Q: Does SS32HE3_A/H have a low leakage current? A: Yes, SS32HE3_A/H has a low leakage current, making it suitable for low-power applications.
Q: Can SS32HE3_A/H be used in reverse polarity protection circuits? A: Yes, SS32HE3_A/H is commonly used in reverse polarity protection circuits due to its low forward voltage drop and fast switching characteristics.
Q: What is the package type for SS32HE3_A/H? A: SS32HE3_A/H is available in a surface mount SMA package.
Q: Is SS32HE3_A/H RoHS compliant? A: Yes, SS32HE3_A/H is RoHS compliant, making it suitable for use in environmentally sensitive applications.
Q: Can SS32HE3_A/H be used in solar panel bypass diode applications? A: Yes, SS32HE3_A/H is commonly used in solar panel bypass diode applications due to its high efficiency and low power loss characteristics.