VS-50WQ06FNTRLHM3 Encyclopedia Entry

Product Overview

Category

The VS-50WQ06FNTRLHM3 belongs to the category of power semiconductor devices.

Use

It is used in various electronic circuits and power systems for controlling and regulating electrical power.

Characteristics

• High voltage and current handling capability
• Low on-state voltage drop
• Fast switching speed
• Robust construction for reliability

Package

The VS-50WQ06FNTRLHM3 is typically available in a TO-247 package.

Essence

The essence of this product lies in its ability to efficiently manage power flow in electronic systems while minimizing energy losses.

Packaging/Quantity

It is commonly packaged individually and sold in quantities suitable for industrial and commercial applications.

Specifications

• Maximum Voltage: 600V
• Maximum Current: 50A
• Forward Voltage Drop: 1.2V at 25°C
• Reverse Recovery Time: 35ns
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The VS-50WQ06FNTRLHM3 typically has three pins: 1. Anode (A) 2. Cathode (K) 3. Gate (G)

Functional Features

• High power handling capacity
• Low conduction losses
• Fast switching characteristics
• Suitable for high-frequency operation

Advantages

• Efficient power management
• Reduced heat dissipation
• Enhanced system reliability
• Suitable for high-power applications

Disadvantages

• Higher cost compared to standard diodes
• Requires careful thermal management

Working Principles

The VS-50WQ06FNTRLHM3 operates based on the principles of power electronics, utilizing its semiconductor properties to control the flow of electrical power within a circuit.

Detailed Application Field Plans

The VS-50WQ06FNTRLHM3 is widely used in: - Switch-mode power supplies - Motor drives - Inverters - Industrial power systems - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the VS-50WQ06FNTRLHM3 include: - IXYS IXFN50N60 - Infineon FFPF30U60S - STMicroelectronics STPSC606D

In conclusion, the VS-50WQ06FNTRLHM3 is a versatile power semiconductor device with robust characteristics, making it suitable for a wide range of power management applications.

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