Diode/Bridge Rectifier

Maximum Forward Average Rectified Current (A) 2 Maximum Reverse\nPeak Voltage (V) 200 Forward Peak\nSurge Current (A) 50 Maximum Forward\nVoltage (V) 0.95 Maximum Reverse\nCurrent ( uA) 2 Maximum reverse\nrecovery time (ns) 35

Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.