Diode/Bridge Rectifier

Silicon carbide SBD1200V20A

Silicon carbide SBD1200V20A

1000V 4A VF=1.1V @ 4A

Diode configuration: Independent DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.68V@2A Reverse current (Ir): 5uA@600V Reverse recovery time ( trr): 35ns Operating temperature: -55℃~+150℃@(Tj)

60V, 15mA, VF=1V@15mA

60V, 15mA, VF=1V@15mA

600V,6A