Diode/Bridge Rectifier

45V, 30A, VF=0.6V@30A

Diode configuration: Standalone DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 350mA Forward voltage drop (Vf): 600mV@200mA Reverse current (Ir): 5uA@30V

This Schottky diode uses the Schottky diode barrier principle and uses platinum barrier metal.

VR=100V IO=3A VF=0.56V@3A

40V,1A,VF=35uA@40V

The device uses the principle of Schottky diode potential barrier and adopts large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. Ideal for low voltage, high frequency rectification, or as a freewheeling and polarity protection diode in applications where compact size and weight are critical to the system.