Diode/Bridge Rectifier

VR=100V IO=2A VF=0.6V@2A

Zener diode VRRM:50V IF:1A

The Schottky diode uses the Schottky diode barrier principle and uses a metal-silicon Power rectifier. It employs an epitaxial structure with oxide passivation and metal-covered contacts. The Schottky diode is suitable for low-voltage high-frequency switching power supply, freewheeling diode and polarity protection diode.

Diode Configuration: Standalone Power: 150mW DC Reverse Withstand Voltage (Vr): 75V Average Rectified Current (Io): 250mA Forward Voltage Drop (Vf): 1.25V@150mA Reverse Current (Ir): 1uA@75V Reverse Recovery time (trr): 4ns Operating temperature: +150℃@(Tj) 75V, 250mA, trr=4ns, VF=1.25V@150mA, PD=150m

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60V, 3A, VF=0.7V@3A

60V, 3A, VF=0.7V@3A

F1MFS-F1-0000HF