Diode/Bridge Rectifier

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries feature epitaxial structures with oxide passivation and metal-covered contacts. This is very suitable for low-voltage high-frequency switching power supply, freewheeling diode and polarity protection diode.

I(AV) 3 VRRM(V) 100 IFsM(A) 70 VFM(V) 0.85 VFMI(AV)(A) 3 IRM@VRRM(μA) 0.3

IF(A) 3 VR(V) 100 VF(V) 0.85 IR(uA) 1000 IFSM(A) 70

IF(A) 3 VR(V) 100 VF(V) 0.85 IR(uA) 1000 IFSM(A) 70

1000V 4A VF=1.1V @ 4A

1000V, 3A, VF=1.1V@3A

1000V, 35A, [email protected]