Diode/Bridge Rectifier

DC reverse withstand voltage (Vr): 40V Silicon carbide Silicon carbide average rectified current (Io): 10A Forward voltage drop (Vf): 480mV@10A Silicon carbide reverse current (Ir): 500μA@40V

DC reverse withstand voltage (Vr): 40V Silicon carbide Silicon carbide average rectified current (Io): 10A Forward voltage drop (Vf): 480mV@10A Silicon carbide reverse current (Ir): 500μA@40V

1 pair common cathode 170V

1 pair common cathode 170V

The FFH75H60S is an ultra-high-speed diode with soft recovery characteristics. It adopts silicon nitride passivation ion-implanted epitaxial planar structure, and its recovery time is only half of the recovery time of ultra-fast diodes. These devices are primarily used as freewheeling/clamping diodes in various switching power supplies and other power switching applications. Its low stored charge and ultra-fast soft recovery minimize ringing and electrical noise in many power switching circuits, thereby reducing power dissipation in switching transistors.