Diode/Bridge Rectifier

DC Reverse Withstand Voltage (Vr) 600 Average Rectified Current (Io) 5 Forward Surge Current (Ifsm) 150 Reverse Current (Ir) 5 Reverse Recovery Time (trr) 35

Maximum Dissipation\nPower 0.35 Maximum Reverse\nPeak Voltage (V) 100 Maximum Reverse\nPeak Voltage IR (uA) 100 Maximum Forward\nVoltage (V) 1 Maximum Forward\nVoltage IF (mA) 10 Maximum reverse \n current IR (uA) 5 Maximum reverse \n current VR (V) 75 Maximum reverse recovery time (ns) 4

Io(mA) 150 VRRM(V) 100 IFSM(A) 4 VF(V) 125 IF(mA) 150 IR(uA) 1 VR(V) 75 Trr(ns) 4

1000V, 1.5A, [email protected]

The MB series Bridge rectifier is a 0.5 A rectifier series that achieves high surge current absorption and occupies a very small footprint. The MB series has a small form factor of 35 mm2 and has excellent surge capability. To absorb high surge currents, the design supports a forward surge peak current (IFSM) rating of 35 A and a 5.0 A 2-second I2T capability. This family of devices also features a breakdown voltage rating of up to 1000 V. These features make the MB series suitable for small power supplies requiring slightly stronger surge capability. If you need higher IFAV rated current, smaller encapsulation, or lower VF value, please learn about ON Semiconductor MDB series Bridge rectifier. If you need lower VF and higher energy efficiency values ​​in MB encapsulation, or even higher surge capability, or need higher surge capability, please find out about ON Semiconductor's upcoming MBxSV series.

150V, 1A, VF=0.85V@1A

Silicon Carbide Diode