Diode/Bridge Rectifier

Diode configuration: 1 pair of common cathode Power: 200mW DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 150mA Forward voltage drop (Vf): 1.25V@150mA Reverse current (Ir): 2.5uA@ 75V reverse recovery time (trr): 4ns Operating temperature: +150℃@(Tj)

Silicon carbidediode SiC SBD Tube is used in new energy, automobiles, inverters, photovoltaics, charging piles, and energy storage

Silicon carbidediode SiC SBD Tube is used in new energy, automobiles, inverters, photovoltaics, charging piles, and energy storage

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

Fast Recovery/Ultra Fast Recovery Diodes

60V,2A,VF=0.7V@2A

DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 5A Forward voltage drop (Vf): 1.7V@5A Reverse current (Ir): 10uA@600V Forward surge current (Ifsm): 200A Reverse recovery time (trr): 35ns Operating temperature: -55℃~+150℃@(Tj)