Diode/Bridge Rectifier

MURS220A-F1-0000HF

40V, 3A, VF=0.57V@3A

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. The Schottky diode is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.

90V, 3A, VF=0.79V@3A

90V, 3A, VF=0.79V@3A

40V,2A,VF=0.5V@2A

Strong anti-surge current capability, zero reverse recovery, Silicon carbideSchottky diode

Strong anti-surge current capability, zero reverse recovery, Silicon carbideSchottky diode

VR/1000V IR/0.005mA VF/1V IO/3A Trr/No ns

45V, 10A, VF=0.43V@10A